Nano-structural Characteristics of N-doped ZnO Thin Films and Fabrication of Film Bulk Acoustic Resonator Devices

2011 ◽  
Author(s):  
E. J. Lee ◽  
R. R. Zhang ◽  
J. D. Park ◽  
G. W. Yoon ◽  
Jisoon Ihm ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Characteristics ◽  
Acoustic Resonator ◽  
Zno Thin Films ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk ◽  
Doped Zno

Design and Fabrication of Wafer Level Dual-Band Thin Film Bulk Acoustic Resonator Filters

2011 ◽  
Vol 308-310 ◽  
pp. 201-208
Author(s):  
Wei Tsai Chang ◽  
Ying Chung Chen ◽  
Chien Chuan Cheng ◽  
Kuo Sheng Kao ◽  
Re Ching Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Dual Band ◽  
Zno Thin Films ◽  
Pass Band ◽  
Wafer Level ◽  
Dual Mode ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk

This paper describes the design and fabrication of dual-mode film bulk acoustic resonator (TFBAR) devices to construct wafer level dual-band T-ladder type filters. The T-ladder type filters is selected in this study for its high quality and simple fabrication processes. The c-axis-tilted ZnO thin films to obtain dual-mode TFBAR devices have been investigated. The characteristics of dual-mode TFBAR devices appeared by off-axis deposition of ZnO thin films with the RF magnetron sputtering. The top and bottom electrodes consisted of titanium (Ti) and platinum (Pt) layers are deposited by dual-gun DC sputtering system. The pass-band width of filters is controlled by the mass loading on the dual-mode. The frequency response is measured using an HP8720 network analyzer and a CASCADE probe station.

Deposition of ZnO thin films by magnetron sputtering for a film bulk acoustic resonator

2003 ◽  
Vol 435 (1-2) ◽  
pp. 179-185 ◽  
Author(s):  
Jae Bin Lee ◽  
Hyeong Joon Kim ◽  
Soo Gil Kim ◽  
Cheol Seong Hwang ◽  
Seong-Hyeon Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Zno Thin Films ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk

Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator

2004 ◽  
Vol 449-452 ◽  
pp. 977-980 ◽  
Author(s):  
S.G. Kim ◽  
Seung Boo Jung ◽  
Ji Hun Oh ◽  
H.J. Kim ◽  
Yong Hyeon Shin
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Film Deposition ◽  
Layer Deposition ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk

Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films.

Development of Human IgE Biosensor Using TFBAR Devices with Shear Mode ZnO Piezoelectric Thin Films

2014 ◽  
Vol 1599 ◽  
Author(s):  
Ying-Chung Chen ◽  
Wei-Tsai Chang ◽  
Chien-Chuan Cheng ◽  
Jia-Ming Jiang ◽  
Kuo-Sheng Kao
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Zno Thin Films ◽  
Shear Mode ◽  
X Ray Diffraction ◽  
Piezoelectric Thin Films ◽  
Deposition Parameters ◽  
Tilting Angle ◽  
Film Bulk

ABSTRACTA novel allergy biosensor is designed and fabricated by using thin film bulk acoustic resonator (TFBAR) devices with shear mode ZnO piezoelectric thin films. To fabricate TFBAR devices, the off-axis RF magnetron sputtering method for the growth of piezoelectric ZnO piezoelectric thin films is adopted. The influences of the relative distance and sputtering parameters are investigated. In this report, the piezoelectric ZnO thin films with tilting angle are set by controlling the deposition parameters. The properties of the shear mode ZnO thin films are investigated by X-ray diffraction and scanning electron microscopy. The frequency response is measured using an HP8720 network analyzer with a CASCADE probe station. The resonance frequency of the shear mode is 796.75 MHz. The sensitivity of the shear mode is calculated to be 462.5 kHz·cm2/ng.

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