Effect of Ultraviolet Irradiation on the Defect States and Charge Transport Properties of Low-k SiOC(-H) Dielectric Films Deposited by UV-Assisted PECVD

2011 ◽  
Author(s):  
A. S. Zakirov ◽  
R. Navamathavan ◽  
T. W. Kang ◽  
C. Y. Kim ◽  
Chi Kyu Choi ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Ultraviolet Irradiation ◽  
Dielectric Films ◽  
Defect States ◽  
Low K

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

Precision Xe Plasma FIB Delayering for Physical Failure Analysis of Sub-20 nm Microprocessor Devices

2017 ◽  
Author(s):  
D. Zudhistira ◽  
V. Viswanathan ◽  
V. Narang ◽  
J.M. Chin ◽  
S. Sharang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Dielectric Films ◽  
Planar Surface ◽  
Chemical Methods ◽  
Root Cause ◽  
Essential Step ◽  
Dielectric Layers ◽  
Wet Chemical ◽  
20 Nm ◽  
Low K

Abstract Deprocessing is an essential step in the physical failure analysis of ICs. Typically, this is accomplished by techniques such as wet chemical methods, RIE, and mechanical manual polishing. Manual polishing suffers from highly non-uniform delayering particularly for sub 20nm technologies due to aggressive back-end-of-line scaling and porous ultra low-k dielectric films. Recently gas assisted Xe plasma FIB has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. In this paper, the successful application of this technique to delayer sub-20 nm microprocessor chips with real defects to root cause the failure is presented.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Annealing-Induced Morphological Changes in Nanocrystalline Quantum Dots and Their Impact on Charge Transport Properties

2011 ◽  
Vol 41 (3) ◽  
pp. 524-529 ◽  
Author(s):  
Sushmita Biswas ◽  
David J. Gosztola ◽  
Gary P. Wiederrecht ◽  
Michael A. Stroscio ◽  
Mitra Dutta
Keyword(s):  
Quantum Dots ◽  
Charge Transport ◽  
Transport Properties ◽  
Morphological Changes

Correlating Charge Transport Properties of Conjugated Polymers in Solution Aggregates and Thin‐Film Aggregates

2021 ◽  
Author(s):  
Jian Pei ◽  
Zi-Yuan Wang ◽  
Lucia Di Virgilio ◽  
Ze-Fan Yao ◽  
Zi-Di Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Conjugated Polymers ◽  
Charge Transport ◽  
Transport Properties

scholarly journals Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Andrey A. Pil’nik ◽  
Andrey A. Chernov ◽  
Damir R. Islamov
Keyword(s):  
Charge Transport ◽  
Thin Layers ◽  
Jump Processes ◽  
Dielectric Films ◽  
Algebraic Equations ◽  
Markov Jump ◽  
Statistical Solution ◽  
Linear Algebraic Equations ◽  
Special Cases ◽  
Thin Dielectric Films

AbstractIn this study, we developed a discrete theory of the charge transport in thin dielectric films by trapped electrons or holes, that is applicable both for the case of countable and a large number of traps. It was shown that Shockley–Read–Hall-like transport equations, which describe the 1D transport through dielectric layers, might incorrectly describe the charge flow through ultra-thin layers with a countable number of traps, taking into account the injection from and extraction to electrodes (contacts). A comparison with other theoretical models shows a good agreement. The developed model can be applied to one-, two- and three-dimensional systems. The model, formulated in a system of linear algebraic equations, can be implemented in the computational code using different optimized libraries. We demonstrated that analytical solutions can be found for stationary cases for any trap distribution and for the dynamics of system evolution for special cases. These solutions can be used to test the code and for studying the charge transport properties of thin dielectric films.

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