Publisher’s Note: “Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies” [Appl. Phys. Lett. 99, 092109 (2011)]

2011 ◽  
Vol 99 (22) ◽  
pp. 229906
Author(s):  
Emre Gür ◽  
Zeng Zhang ◽  
Sriram Krishnamoorthy ◽  
S. Rajan ◽  
S. A. Ringel
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Detailed Characterization

Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

2011 ◽  
Vol 99 (9) ◽  
pp. 092109 ◽  
Author(s):  
Emre Gür ◽  
Zeng Zhang ◽  
Sriram Krishnamoorthy ◽  
S. Rajan ◽  
S. A. Ringel
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Detailed Characterization

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

1987 ◽  
Vol 97 ◽  
Author(s):  
H. Kong ◽  
H. J. Kim ◽  
J. A. Edmond ◽  
J. W. Palmour ◽  
J. Ryu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Deep Level ◽  
Schottky Diodes ◽  
Free Carriers ◽  
Device Development ◽  
Post Annealing ◽  
P Type ◽  
Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process

1992 ◽  
Author(s):  
Tamotsu HASHIZUME ◽  
Hideki HASEGAWA ◽  
Takayuki SAWADA ◽  
Andreas GRUB ◽  
Hans L. HARTNAGEL
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Submillimeter Wave ◽  
Electrochemical Process

Deep Level Defect Characterization of MBE Grown Ingaas/Gaas Heterostructures.

1990 ◽  
Vol 209 ◽  
Author(s):  
W.R. Buchwald ◽  
J.H. Zhao ◽  
F.C. Rong
Keyword(s):  
Conduction Band ◽  
Cross Sections ◽  
Deep Level ◽  
Schottky Diodes ◽  
Energy Levels ◽  
Depth Profiling ◽  
Defect Characterization ◽  
Deep Level Defect ◽  
Transient Spectroscopy

ABSTRACTDeep level transient spectroscopy (DLTS) measurements have been performed on Schottky diodes fabricated on MBE grown InGaAs/GaAs heterostructures. The dominant electron trap in this material is found at a depth of 0.30eV below the GaAs conduction band and is believed to be the previously observed M3 defect. Two other defects, at depths of 0.50eV and 0.58eV below the GaAs conduction band, were also observed. Defect depth profiling shows the 0.50eV defect to be spatially locatednear the heterointerface. The 0.58eV defect is not observed near the heterointerface but is observed in large concentrations deep in the GaAs epilayer. Optical DLTS measurements reveal deep defects at 0.54eV and 0.31eV above the InGaAs valence band as well as a large, broad peak, most likely consisting of several energy levels with varying capture cross sections,located at the heterointerface. Two carrier accumulation peaks were also seen in the CV carrier profiling measurements and are suggested to be due to two heterointerface defects located at 0.68eV and 0.87eV below the GaAs conduction band.Thermally stimulated capacitance measurements also indicate minority hole emission in this n-InGaAs/N-GaAs heterostructure.

Deep Level Defects in GaN Characterized by Capacitance Transient Spectroscopies

1995 ◽  
Vol 378 ◽  
Author(s):  
W. Gütz ◽  
N. M. Johnson ◽  
R. A. Street ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Thermal Activation ◽  
Deep Level ◽  
Schottky Diodes ◽  
Deep Levels ◽  
Electron Photoemission ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Electronic Defects ◽  
Threshold Energies

AbstractElectronic defects in MOCVD-grown n-type GaN were characterized by conventional deep level transient spectroscopy (DLTS) and by photoemission capacitance transient spectroscopy (O-DLTS) performed on Schottky diodes. With DLTS two deep levels were detected with thermal activation energies for electron emission to the conduction band of 0.16 eV and 0.44 eV. With O-DLTS we demonstrate four new deep levels with optical threshold energies for electron photoemission of ∼ 0.87 eV, 0.97 eV, 1.25 eV and 1.45 eV. The O-DLTS apparatus and the measurement are discussed in detail. We also report characterization of the Au-GaN barrier height of the Schottky diode by internal photoemission.

Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a NovelIn-SituElectrochemical Process

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 486-490 ◽  
Author(s):  
Tamotsu Hashizume ◽  
Hideki Hasegawa ◽  
Takayuki Sawada ◽  
Andreas Grüb ◽  
Hans L. Hartnagel
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Submillimeter Wave

Intramolecular Proton Transfer in the Isomerization of Hydroxyacetone: A Detailed Characterization Based on Reaction Force Analysis and the Bond Fragility Spectrum

2020 ◽  
Author(s):  
Wallace Derricotte ◽  
Huiet Joseph
Keyword(s):  
Chemical Potential ◽  
Reaction Force ◽  
Intramolecular Proton Transfer ◽  
Intermediate Energy ◽  
Force Analysis ◽  
Activation Energy Barrier ◽  
Detailed Characterization ◽  
Proton Transfers ◽  
Reaction Force Constant

The mechanism of isomerization of hydroxyacetone to 2-hydroxypropanal is studied within the framework of reaction force analysis at the M06-2X/6-311++G(d,p) level of theory. Three unique pathways are considered: (i) a step-wise mechanism that proceeds through formation of the Z-isomer of their shared enediol intermediate, (ii) a step-wise mechanism that forms the E-isomer of the enediol, and (iii) a concerted pathway that bypasses the enediol intermediate. Energy calculations show that the concerted pathway has the lowest activation energy barrier at 45.7 kcal mol<sup>-1</sup>. The reaction force, chemical potential, and reaction electronic flux are calculated for each reaction to characterize electronic changes throughout the mechanism. The reaction force constant is calculated in order to investigate the synchronous/asynchronous nature of the concerted intramolecular proton transfers involved. Additional characterization of synchronicity is provided by calculating the bond fragility spectrum for each mechanism.

DETAILED CHARACTERIZATION OF EUROPA'S RIDGE MORPHOLOGY

2016 ◽  
Author(s):  
Janelle A.F. Heitmeier ◽  
◽  
Emily S. Martin ◽  
Jordan M. Bretzfelder ◽  
D. Alex Patthoff ◽  
...  
Keyword(s):  
Detailed Characterization
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