Erratum: “Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy” [J. Appl. Phys.81, 1905 (1997)]

1997 ◽  
Vol 82 (12) ◽  
pp. 6372-6372
Author(s):  
R. Y.-F. Yip ◽  
A. Aı̈t-Ouali ◽  
A. Bensaada ◽  
P. Desjardins ◽  
M. Beaudoin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Vapor Phase Epitaxy ◽  
Optical Modulator ◽  
Multiple Quantum ◽  
Organic Vapor ◽  
Relaxation Effects ◽  
Metal Organic

Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy

1997 ◽  
Vol 81 (4) ◽  
pp. 1905-1915 ◽  
Author(s):  
R. Y.-F. Yip ◽  
A. Aït-Ouali ◽  
A. Bensaada ◽  
P. Desjardins ◽  
M. Beaudoin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Vapor Phase Epitaxy ◽  
Optical Modulator ◽  
Multiple Quantum ◽  
Organic Vapor ◽  
Relaxation Effects ◽  
Metal Organic

Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JL10 ◽  
Author(s):  
Liyang Zhang ◽  
Ruben R. Lieten ◽  
Magdalena Latkowska ◽  
Michał Baranowski ◽  
Robert Kudrawiec ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Optical Characterization ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Organic Vapor ◽  
Metal Organic

InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Kuramata ◽  
K. Domen ◽  
R. Soejima ◽  
K. Horino ◽  
S. Kubota ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Pressure ◽  
Threshold Current ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Magnesium Doping ◽  
Organic Vapor ◽  
Metal Organic

AbstractWe report the crystal growth and the characteristics of InGaN multiple quantum well (MQW) laser diodes grown on a 6H-SiC substrate using a low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). We discuss the buffer layer, the control of InGaN and AlGaN alloy composition, the magnesium doping of GaN and AlGaN, and the characteristics of the MQW structure. We also demonstrate the room-temperature pulsed operation of the laser diode. The threshold voltage was reduced to 15 V by improving the p-contact resistance. The threshold current was reduced to 500 mA by changing the MQW structure and employing high reflection coating.

Group III nitrides grown on 4H-SiC (3038) substrate by metal-organic vapor phase epitaxy

2004 ◽  
Vol 831 ◽  
Author(s):  
Akira Honshio ◽  
Tsukasa Kitano ◽  
Masataka Imura ◽  
Yasuto Miyake ◽  
Hideki Kasugai ◽  
...  
Keyword(s):  
Single Crystal ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Growth Pressure ◽  
Organic Vapor ◽  
Metal Organic

ABSTRACTThe heteroepitaxial growth of a GaN single crystal by metal-organic vapor phase epitaxy on a 4H-SiC (3038) substrate was demonstrated. The crystallographic orientation of GaN was found to be dependent on growth pressure. When the growth pressure was 1000 hPa, the orientation of the GaN single crystal was consistent with that of the SiC substrate, where the c-plane of the GaN was single crystal tilted 54.7° from the surface plane. Then, we fabricated a violet-light-emitting diode (LED) with a GaInN multiple-quantum-well (QW) active layer grown on the GaN layer, which coherently grew on the 4H-SiC (3038 ) substrate. The blue shift of the peak wavelength with increasing injection current of up to 100 mA was confirmed to be two times smaller than that of a conventional LED on a c-plane sapphire substrate due to a low internal polarization.

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