Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy

2011 ◽  
Vol 110 (12) ◽  
pp. 124508 ◽  
Author(s):  
M. Shafi ◽  
R. H. Mari ◽  
A. Khatab ◽  
M. Henini ◽  
A. Polimeni ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Levels

Deep levels in GaAs grown by atomic layer molecular beam epitaxy

1994 ◽  
Vol 65 (22) ◽  
pp. 2848-2850 ◽  
Author(s):  
E. Gombia ◽  
R. Mosca ◽  
A. Bosacchi ◽  
M. Madellaf ◽  
S. Franchi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Deep Levels

Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 261-265
Author(s):  
A. Bosacchi ◽  
E. Gombia ◽  
R. Mosca ◽  
S. Franchi ◽  
A. Carnera ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Deep Levels ◽  
Shallow Donors

Radiative and nonradiative rates and deep levels in zinc selenide grown by molecular‐beam epitaxy

1995 ◽  
Vol 78 (3) ◽  
pp. 1731-1736 ◽  
Author(s):  
J. W. Allen ◽  
D. T. Reid ◽  
W. Sibbett ◽  
W. Sleat ◽  
Jia‐Zhen Zheng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Zinc Selenide ◽  
Molecular Beam ◽  
Deep Levels

Deep levels in Ga‐doped ZnSe grown by molecular‐beam epitaxy

1990 ◽  
Vol 67 (3) ◽  
pp. 1389-1392 ◽  
Author(s):  
Takao Miyajima ◽  
Katsuhiro Akimoto ◽  
Yoshifumi Mori
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Levels
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