Effect of ultraviolet light irradiation on amorphous carbon nitride films

1997 ◽  
Vol 82 (10) ◽  
pp. 4912-4915 ◽  
Author(s):  
Mei Zhang ◽  
Yoshikazu Nakayama
2014 ◽  
Vol 29 (9) ◽  
pp. 941
Author(s):  
JIANG Jin-Long ◽  
WANG Qiong ◽  
HUANG Hao ◽  
ZHANG Xia ◽  
WANG Yu-Bao ◽  
...  

2021 ◽  
pp. 2004001
Author(s):  
Youyu Duan ◽  
Yang Wang ◽  
Liyong Gan ◽  
Jiazhi Meng ◽  
Yajie Feng ◽  
...  

2021 ◽  
Vol 3 (3) ◽  
pp. 1244-1251
Author(s):  
Hyunjin Joh ◽  
Gopinathan Anoop ◽  
Won-June Lee ◽  
Dipjyoti Das ◽  
Jun Young Lee ◽  
...  

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.


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