Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors

1997 ◽  
Vol 82 (6) ◽  
pp. 3081-3088 ◽  
Author(s):  
C. Zhou ◽  
D. M. Newns
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Dead Layer ◽  
Thin Film Capacitors ◽  
Layer Effect

Dead layer effect and its elimination in ferroelectric thin film with oxide electrodes

2016 ◽  
Vol 112 ◽  
pp. 216-223 ◽  
Author(s):  
Qiong Yang ◽  
Juexian Cao ◽  
Yichun Zhou ◽  
Lizhong Sun ◽  
Xiaojie Lou
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Dead Layer ◽  
Oxide Electrodes ◽  
Layer Effect

Investigation of Dead Layer Thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au Thin Film Capacitors

2000 ◽  
Vol 655 ◽  
Author(s):  
L. J. Sinnamon ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Layer Thickness ◽  
Perovskite Phase ◽  
Frequency Dispersion ◽  
Dead Layer ◽  
Parameter Ratio ◽  
Thin Film Capacitors ◽  
Dead Layer Thickness ◽  
The Dead

AbstractThin film capacitors with barium strontium titanate (BST) dielectric layers of 7.5 to 950 nm were fabricated by Pulsed Laser Deposition. XRD and EDX analyses confirmed a strongly oriented BST cubic perovskite phase with the desired cation stoichiometry. Room temperature frequency dispersion (ε100 kHz / ε100 Hz) for all capacitors was greater than 0.75. Absolute values for the dielectric constant were slightly lower than expected. This was attributed to the use of Au top electrodes since the same sample showed up to a threefold increase in dielectric constant when Pt was used in place of Au. Dielectric constant as a function of thicknesses greater than 70 nm, was fitted using the series capacitor model. The large interfacial parameter ratio di / εi of 0.40 ± 0.05 nm implied a significant dead-layer component within the capacitor structure. Modelled consideration of the dielectric behaviour for BST films, whose total thickness was below that of the dead layer, predicted anomalies in the plots of d/ ε against d at the dead layer thickness. For the SRO/BST/Au system studied, no anomaly was observed. Therefore, either (i) 7.5 nm is an upper limit for the total dead layer thickness in this system, or (ii) dielectric collapse is not associated with a distinct interfacial dead layer, and is instead due to a through-film effect.

Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitors

2001 ◽  
Vol 78 (12) ◽  
pp. 1724-1726 ◽  
Author(s):  
L. J. Sinnamon ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Dead Layer ◽  
Thin Film Capacitors ◽  
Dead Layer Thickness ◽  
Au Thin Film

BiFeO3-doped (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 ferroelectric thin film capacitors for high energy density storage applications

2017 ◽  
Vol 110 (15) ◽  
pp. 152901 ◽  
Author(s):  
Sung Sik Won ◽  
Masami Kawahara ◽  
Lindsay Kuhn ◽  
Vineeth Venugopal ◽  
Jiyeon Kwak ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Density ◽  
Ferroelectric Thin Film ◽  
High Energy ◽  
High Energy Density ◽  
Thin Film Capacitors

scholarly journals Ferroelectric Thin-Film Capacitors and Piezoelectric Switches for Mobile Communication Applications

2009 ◽  
Vol 56 (8) ◽  
pp. 1505-1512 ◽  
Author(s):  
Mareike Klee ◽  
Marco Van Esch ◽  
Wilco Keur ◽  
B. Kumar ◽  
Linda Van Leuken-Peters ◽  
...  
Keyword(s):  
Thin Film ◽  
Mobile Communication ◽  
Ferroelectric Thin Film ◽  
Thin Film Capacitors

scholarly journals Detector pixel in dielectric bolometer mode based on ferroelectric thin film capacitors for uncooled infrared image sensor

2000 ◽  
Vol 120 (1) ◽  
pp. 15-19 ◽  
Author(s):  
Kazuhiko Hashimoto ◽  
Minoru Noda ◽  
Tomonori Mukaigawa ◽  
Ryuichi Kubo ◽  
Hidekazu Tanaka ◽  
...  
Keyword(s):  
Thin Film ◽  
Infrared Image ◽  
Ferroelectric Thin Film ◽  
Image Sensor ◽  
Thin Film Capacitors
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