scholarly journals High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1−xN

2011 ◽  
Vol 110 (10) ◽  
pp. 103506 ◽  
Author(s):  
O. Donmez ◽  
M. Gunes ◽  
A. Erol ◽  
M. C. Arikan ◽  
N. Balkan
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Carrier Concentration ◽  
High Carrier Concentration ◽  
Bowing Parameter ◽  
High Carrier

Near Band Gap Photoluminescence Broadening In n-Gan Films

1997 ◽  
Vol 482 ◽  
Author(s):  
E. Iliopoulos ◽  
D. Doppalapudi ◽  
H. M. Ng ◽  
T. D. Moustakas
Keyword(s):  
Band Gap ◽  
Carrier Concentration ◽  
Impurity Band ◽  
Potential Method ◽  
Band Broadening ◽  
High Carrier Concentration ◽  
Degenerate Semiconductors ◽  
Compensation Ratio ◽  
High Carrier ◽  
Photoluminescence Peak

AbstractThis paper addresses the broadening mechanism of the near band gap photoluminescence in GaN films doped n-type with silicon. The films were produced by plasma assisted MBE and their carrier concentration was varied systematically from 1015 to 1020 cm−3. The photoluminescence was excited with a 10 mW He-Cd laser at 77K. At low carrier conentration ( < 1017 cm−3 ) the photoluminescence peak has FWHM of about 18 meV, while at high carrier concentration (>1018 cm−3 ) the FWHM increase monotonically with the carrier concentration up to about 120 meV. The broadening of the line at high carrier concentration is attributed to impurity band broadening and tailing of the density of states. The data were quantitatively analyzed, as a function of carrier concentration and compensation ratio, using the impurity band broadening model of Morgan [1] and the agreement between model and experimental data supports the model's validity and suggest a potential method of determining the compensation in degenerate semiconductors.

Effect of ITO Carrier Concentration on the Performance of Organic Light-Emitting Diodes

1999 ◽  
Vol 598 ◽  
Author(s):  
Furong Zhu ◽  
Keran Zhang ◽  
C. H. A. Huan ◽  
A.T.S. Wee ◽  
Ewald Guenther ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Indium Tin Oxide ◽  
Film Deposition ◽  
Hole Injection ◽  
Maximum Efficiency ◽  
High Carrier Concentration ◽  
Band Bending ◽  
Light Emitting ◽  
Organic Light ◽  
High Carrier

ABSTRACTThe indium tin oxide (ITO) anodes for organic light emitting diode (OLED) were made from an oxidised target with In2O3 and SnO2 in a weight proportion of 9:1 using the RF magnetron sputtering method. The comparable ITO anodes with different carrier concentrations were prepared by varying the hydrogen partial pressure during film deposition. The current-luminance-voltage characteristics of the devices indicated that a high carrier concentration in ITO plays a role in improving OLED performance. A maximum efficiency of 3.8 cd/A was achieved when an ITO anode with a higher carrier concentration of 9×1020 cm−3 was used in a fluorene based OLED. This efficiency is about 1.5 times higher than that of an identical device made with an ITO anode having a lower carrier concentration of 5×1020 cm−3. The increase in electroluminescent efficie ncy reflects an enhanced hole-injection in the device. We consider that enhanced hole injection is due to the reduced band bending in ITO when it has a high carrier concentration

scholarly journals Synergistic boost of output power density and efficiency in In-Li–codoped SnTe

2019 ◽  
Vol 116 (44) ◽  
pp. 21998-22003 ◽  
Author(s):  
Fengkai Guo ◽  
Haijun Wu ◽  
Jianbo Zhu ◽  
Honghao Yao ◽  
Yang Zhang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Power Density ◽  
Output Power ◽  
Traditional Method ◽  
Lattice Thermal Conductivity ◽  
Heat Output ◽  
Leg Length ◽  
Temperature Dependent ◽  
High Carrier Concentration ◽  
High Carrier

We report enhanced thermoelectric performance of SnTe by further increasing its intrinsic high carrier concentration caused by Sn vacancies in contrast to the traditional method. Along with In2Te3 alloying, which results in an enhanced Seebeck coefficient, Li2Te is added to further increase the carrier concentration in order to maintain high electrical conductivity. Finally, a relatively high PFave of ∼28 μW cm−1 K−2 in the range between 300 and 873 K is obtained in an optimized SnTe-based compound. Furthermore, nanoprecipitates with extremely high density are constructed to scatter phonons strongly, resulting in an ultralow lattice thermal conductivity of ∼0.45 W m−1 K−1 at 873 K. Given that the Z value is temperature dependent, the (ZT)eng and (PF)eng values are adopted to accurately predict the performance of this material. Taking into account the Joule and Thomson heat, output power density of ∼5.53 W cm−2 and leg efficiency of ∼9.6% are calculated for (SnTe)2.94(In2Te3)0.02-(Li2Te)0.045 with a leg length of 4 mm and cold- and hot-side temperatures of 300 and 870 K, respectively.

scholarly journals Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Deng-Feng Li ◽  
Min Luo ◽  
Bo-Lin Li ◽  
Cheng-Bing Wu ◽  
Bo Deng ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
First Principles ◽  
Ionization Energy ◽  
Formation Energy ◽  
First Principles Calculations ◽  
High Carrier Concentration ◽  
Low Resistivity ◽  
High Carrier ◽  
P Type ◽  
Codoping Method

By using first principles calculations, we propose a codoping method of using acceptors and donors simultaneously to realize low-resistivity and high carrier concentration p-type ZnS with wurtzite structure. The ionization energy of singleNScan be lowered by introducing theIIIZn-NS(III = Al, Ga, In) passivation system. Codoping method in ZnS (2N, III) has lower formation energy comparing with single doping of N since III elements act as reactive codopants.

Systematic Studies on Magnetron-Sputtered Indium Nitride

1992 ◽  
Vol 242 ◽  
Author(s):  
W. A. Bryden ◽  
S. A. Ecelberger ◽  
J. S. Morgan ◽  
T. O. Poehler ◽  
T. J. Kistenmacher
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Deposition Temperature ◽  
Inert Gases ◽  
Morphological Transition ◽  
Heteroepitaxial Growth ◽  
High Carrier Concentration ◽  
High Carrier ◽  
Nitrogen Vacancies

ABSTRACTExtensive and systematic studies on reactive magnetron sputtering of InN thin films are summarized. The films have been deposited onto several types of substrates, with variations in such process parameters as deposition temperature, partial pressures of reactive and inert gases, sputtering power and gas flows. These films have been characterized by measuring their electrical, optical, structural and morphological properties. It has been shown that epitaxial growth of InN occurs on the basal plane of single-crystal (00.1) sapphire and (001) mica substrates and on the (111) face of cubic substrates such as silicon and zirconia.Two principal problems currently limit the usefulness of thin films of InN. First, although epitaxy can be attained with the proper choice of substrate type and deposition temperature, the resulting film is an agglomerate of epitaxial grains -- not a single crystal. Second, all magnetron sputtered InN films prepared to date have low mobility and high carrier concentration (likely due to nitrogen vacancies). In an attempt to address these problems, experiments on the growth and characterization of sputtered InN films have been carried out and are discussed here with particular emphasis on seeded heteroepitaxial growth and the effects of film deposition temperature.For example, it was found early that the growth of InN on the bare surface of several crystalline substrates at growth temperatures near 350°C results in a morphological transition that causes a degradation of semiconducting properties. The predeposition of an AIN seed layer inhibits this morphological transition and stabilizes a relatively high mobility state, but a still too high carrier concentration obtains. Further progress critically depends on optimizing the seeded heteroepitaxial growth technique in conjunction with the achievement of InN films with lower density of nitrogen vacancies.

Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N

2013 ◽  
Vol 6 (12) ◽  
pp. 121002 ◽  
Author(s):  
Toru Sugiyama ◽  
Daisuke Iida ◽  
Toshiki Yasuda ◽  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
High Carrier Concentration ◽  
Low Resistivity ◽  
High Carrier ◽  
Si Doped

Ge doped GaN with controllable high carrier concentration for plasmonic applications

2013 ◽  
Vol 103 (24) ◽  
pp. 242107 ◽  
Author(s):  
Ronny Kirste ◽  
Marc P. Hoffmann ◽  
Edward Sachet ◽  
Milena Bobea ◽  
Zachary Bryan ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
High Carrier Concentration ◽  
High Carrier

Thermal and electrical properties of high-quality freestanding GaN wafers with high carrier concentration

2007 ◽  
Vol 4 (7) ◽  
pp. 2215-2218 ◽  
Author(s):  
Yuichi Oshima ◽  
Takehiro Yoshida ◽  
Takeshi Eri ◽  
Masatomo Shibata ◽  
Tomoyoshi Mishima
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
High Quality ◽  
High Carrier Concentration ◽  
High Carrier ◽  
Thermal And Electrical Properties

Molecular doping in organic semiconductors: fully solution-processed, vacuum-free doping with metal–organic complexes in an orthogonal solvent

2017 ◽  
Vol 5 (46) ◽  
pp. 12023-12030 ◽  
Author(s):  
Ryo Fujimoto ◽  
Yu Yamashita ◽  
Shohei Kumagai ◽  
Junto Tsurumi ◽  
Alexander Hinderhofer ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Organic Semiconductors ◽  
High Carrier Concentration ◽  
Solution Processed ◽  
Organic Complexes ◽  
Metal Organic ◽  
High Carrier ◽  
Molecular Doping ◽  
Orthogonal Solvent

A novel route of molecular doping in organic semiconductors is demonstrated to achieve high carrier concentration.

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