The role of extra-atomic relaxation in determining Si 2p binding energy shifts at silicon/silicon oxide interfaces

K. Z. Zhang; J. N. Greeley; Mark M. Banaszak Holl; F. R. McFeely

doi:10.1063/1.366037

The role of extra-atomic relaxation in determining Si 2p binding energy shifts at silicon/silicon oxide interfaces

Journal of Applied Physics ◽

10.1063/1.366037 ◽

1997 ◽

Vol 82 (5) ◽

pp. 2298-2307 ◽

Cited By ~ 33

Author(s):

K. Z. Zhang ◽

J. N. Greeley ◽

Mark M. Banaszak Holl ◽

F. R. McFeely

Keyword(s):

Binding Energy ◽

Silicon Oxide ◽

Oxide Interfaces ◽

Atomic Relaxation ◽

Silicon Silicon

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Extra-atomic Relaxation and Core-Level Binding Energy Shifts at Silicon/Silicon Oxide Interfaces: Effects of Cluster Size on Physical Models

The Journal of Physical Chemistry B ◽

10.1021/jp973254o ◽

1998 ◽

Vol 102 (20) ◽

pp. 3930-3935 ◽

Cited By ~ 5

Author(s):

K. Z. Zhang ◽

M. M. Banaszak Holl ◽

F. R. McFeely

Keyword(s):

Binding Energy ◽

Cluster Size ◽

Silicon Oxide ◽

Core Level ◽

Physical Models ◽

Oxide Interfaces ◽

Atomic Relaxation ◽

Silicon Silicon ◽

Core Level Binding Energy

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Infrared and density-functional-theory study of spherosiloxane-based model silicon/silicon oxide interfaces

Physical Review B ◽

10.1103/physrevb.64.155317 ◽

2001 ◽

Vol 64 (15) ◽

Cited By ~ 8

Author(s):

Kenneth T. Nicholson ◽

Mark M. Banaszak Holl

Keyword(s):

Density Functional Theory ◽

Density Functional ◽

Silicon Oxide ◽

Density Functional Theory Study ◽

Functional Theory ◽

Oxide Interfaces ◽

Silicon Silicon

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New Magnetic Properties of Silicon/Silicon Oxide Interfaces

Advanced Materials ◽

10.1002/adma.200601762 ◽

2007 ◽

Vol 19 (7) ◽

pp. 925-928 ◽

Cited By ~ 44

Author(s):

G. Kopnov ◽

Z. Vager ◽

R. Naaman

Keyword(s):

Magnetic Properties ◽

Silicon Oxide ◽

Oxide Interfaces ◽

Silicon Silicon

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Structure, defects, and strain in silicon-silicon oxide interfaces

Journal of Applied Physics ◽

10.1063/1.4862809 ◽

2014 ◽

Vol 115 (4) ◽

pp. 043531 ◽

Cited By ~ 14

Author(s):

Goran Kovačević ◽

Branko Pivac

Keyword(s):

Silicon Oxide ◽

Oxide Interfaces ◽

Structure Defects ◽

Silicon Silicon

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Quantitative depth profiling at silicon/silicon oxide interfaces by means of Cs+ sputtering in negative mode by ToF-SIMS: a full spectrum approach

Applied Surface Science ◽

10.1016/s0169-4332(02)00655-4 ◽

2003 ◽

Vol 203-204 ◽

pp. 52-55 ◽

Cited By ~ 25

Author(s):

S. Ferrari ◽

M. Perego ◽

M. Fanciulli

Keyword(s):

Silicon Oxide ◽

Depth Profiling ◽

Full Spectrum ◽

Oxide Interfaces ◽

Negative Mode ◽

Tof Sims ◽

Silicon Silicon

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Photomodulated Second-Harmonic Generation at Silicon-Silicon Oxide Interfaces: From Modeling to Application

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.6731 ◽

2003 ◽

Vol 42 (Part 1, No. 11) ◽

pp. 6731-6736 ◽

Cited By ~ 2

Author(s):

Elena D. Mishina ◽

Nobuko Tanimura ◽

Seiichiro Nakabayashi ◽

Oleg A. Aktsipetrov ◽

Michael C. Downer

Keyword(s):

Second Harmonic Generation ◽

Harmonic Generation ◽

Silicon Oxide ◽

Second Harmonic ◽

Oxide Interfaces ◽

Silicon Silicon

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Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces

Thin Solid Films ◽

10.1016/s0040-6090(03)00601-1 ◽

2003 ◽

Vol 437 (1-2) ◽

pp. 135-139 ◽

Cited By ~ 26

Author(s):

Vladimir A Gritsenko ◽

Alexandr V Shaposhnikov ◽

W.M Kwok ◽

Hei Wong ◽

Georgii M Jidomirov

Keyword(s):

Silicon Nitride ◽

Valence Band ◽

Silicon Oxide ◽

Band Offset ◽

Valence Band Offset ◽

Oxide Interfaces ◽

Silicon Silicon

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6192. Arsenic segregation to silicon/silicon oxide interfaces

Vacuum ◽

10.1016/0042-207x(86)90459-8 ◽

1986 ◽

Vol 36 (10) ◽

pp. 736

Keyword(s):

Silicon Oxide ◽

Oxide Interfaces ◽

Silicon Silicon

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Surface Infrared Studies of Silicon/Silicon Oxide Interfaces Derived from Hydridosilsesquioxane Clusters

Journal of the American Chemical Society ◽

10.1021/ja980741o ◽

1998 ◽

Vol 120 (31) ◽

pp. 7776-7782 ◽

Cited By ~ 16

Author(s):

J. N. Greeley ◽

L. M. Meeuwenberg ◽

M. M. Banaszak Holl

Keyword(s):

Silicon Oxide ◽

Oxide Interfaces ◽

Infrared Studies ◽

Silicon Silicon

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Model analysis of electron tunneling through n-type silicon/silicon oxide interfaces

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283548 ◽

2004 ◽

Author(s):

V. Filip ◽

H. Wong ◽

P.L. Chu

Keyword(s):

Silicon Oxide ◽

Electron Tunneling ◽

Model Analysis ◽

Oxide Interfaces ◽

Type Silicon ◽

Silicon Silicon

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