Computation of the effective dielectric constant of two-component, three-dimensional mixtures using a simple pole expansion method

1997 ◽  
Vol 82 (1) ◽  
pp. 345-350 ◽  
Author(s):  
Ce Liu ◽  
Hongxu Wu
1993 ◽  
Vol 115 (2) ◽  
pp. 219-224 ◽  
Author(s):  
R. K. Agarwal ◽  
A. Dasgupta

A mechanistic model is presented for predicting the effective dielectric constant and loss tangent of woven-fabric reinforced composites with low-loss constituents. A two-scale asymptotic homogenization scheme is used to predict the orthotropic effective properties. A three-dimensional unit-cell enclosing the characteristic periodic repeat pattern in the fabric weave is isolated and modeled mathematically. Electrostatic boundary value problems (BVP’s) are formulated in the unit-cell and are solved analytically to predict effective dielectric constant of the composite, using three-dimensional series-parallel reactance nets. Results are also verified numerically, using finite element methods. The effective dielectric constant and the effective loss tangent are then obtained, analogous to mechanical viscoelastic problems for low-loss materials. The predicted dielectric constant and loss tangent are compared with experimental results for E-glass/epoxy laminates. Frequency dependence of the effective dielectric constant and loss tangent is obtained from the corresponding behavior of the constituent materials. Trade-off studies are conducted to investigate the effect of the constituent material properties on orthotropic effective dielectric permittivity.


Author(s):  
J.C Park ◽  
J.M. Choi ◽  
J.W. Oh ◽  
J.T. Choi ◽  
S.S. Kim ◽  
...  

Chemical vapor deposited tantalum pentoxide (Ta2O5) films have been a promising dielectric material for a storage capacitor in high-density DRAM with three-dimensional cell architecture, due to its higher dielectric constant than that of conventional SiO2 or Si3N4/SiO2 films. The effective dielectric constant of Ta2O5 films is influenced by the thickness of interfacial lower-dielectric Si02 layer which could be a native oxide or a thermally grown oxide during deposition and annealing. In general, the capacitor with the thinner SiO2 layer has the larger effective dielectric constant. In this work, the capacitor structure films prepared with or without RTN treatment, which was performed to inhibit the growth of SiO2, were studied by various TEM techniques.Two samples were prepared to compare the characteristics of the Ta2O5 films fabricated with or without RTN treatment Ta2O5 films were deposited on a phosphorus-doped polysilicon on a p-type silicon substrate by low pressure chemical vapor deposition (LPCVD).


2020 ◽  
Vol 2020 (10) ◽  
Author(s):  
Patrick Concha ◽  
Lucrezia Ravera ◽  
Evelyn Rodríguez ◽  
Gustavo Rubio

Abstract In the present work we find novel Newtonian gravity models in three space-time dimensions. We first present a Maxwellian version of the extended Newtonian gravity, which is obtained as the non-relativistic limit of a particular U(1)-enlargement of an enhanced Maxwell Chern-Simons gravity. We show that the extended Newtonian gravity appears as a particular sub-case. Then, the introduction of a cosmological constant to the Maxwellian extended Newtonian theory is also explored. To this purpose, we consider the non-relativistic limit of an enlarged symmetry. An alternative method to obtain our results is presented by applying the semigroup expansion method to the enhanced Nappi-Witten algebra. The advantages of considering the Lie algebra expansion procedure is also discussed.


Author(s):  
Aakashdeep ◽  
Saurav Kr. Basu ◽  
G. V. Ujjwal ◽  
Sakshi Kumari ◽  
V. R. Gupta

1992 ◽  
Vol 258 ◽  
Author(s):  
Z. Jing ◽  
J. L. Whitten ◽  
G. Lucovsky

ABSTRACTWe have performed ab initio calculations and determined the bond-energies and vibrational frequencies of Si-H groups that are: i) attached to Si-atoms as their immediate, and also more distant neighbors; and ii) attached to three O-atoms as their immediate neighbors, but are connected to an all Si-atom matrix. These arrangements simulate bonding geometries on Si surfaces, and the calculated frequency for i) is in good agreement with that of an Si-H group on an Si surface. To compare these results with a-Si:H alloys it is necessary to take into account an additional factor: the effective dielectric constant of the host. We show how to do this, demonstrating the way results of the ab initio calculations should then be compared with experimental data.


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