Inkjet printing of single-walled carbon nanotube thin-film transistors patterned by surface modification

2011 ◽  
Vol 99 (18) ◽  
pp. 183106 ◽  
Author(s):  
Yuki Nobusa ◽  
Yohei Yomogida ◽  
Satoki Matsuzaki ◽  
Kazuhiro Yanagi ◽  
Hiromichi Kataura ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Modification ◽  
Carbon Nanotube ◽  
Inkjet Printing ◽  
Thin Film Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

scholarly journals Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52517-52523 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Jian-Hua Zhang
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Solution Processed ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Bias Stability

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

Printable carbon nanotube-based elastic conductors for fully-printed sub-1 V stretchable electrolyte-gated transistors and inverters

2020 ◽  
Vol 8 (11) ◽  
pp. 3639-3645
Author(s):  
Kyung Gook Cho ◽  
Yeong Kwan Kwon ◽  
Seong Su Jang ◽  
Kyoung Hwan Seol ◽  
Jong Hyuk Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Single-walled carbon nanotube (SWCNT)-based hybrid electrodes are promising for fully-printed stretchable thin-film transistors and inverters.

Fine Patterning of Inkjet-Printed Single-Walled Carbon-Nanotube Thin-Film Transistors

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FD15 ◽  
Author(s):  
Yuki Nobusa ◽  
Yuki Takagi ◽  
Shota Gocho ◽  
Satoki Matsuzaki ◽  
Kazuhiro Yanagi ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors

2011 ◽  
Vol 248 (11) ◽  
pp. 2668-2671 ◽  
Author(s):  
D. H. Kim ◽  
J. K. Lee ◽  
J. H. Huh ◽  
Y. H. Kim ◽  
G. T. Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Electronic Properties ◽  
Thin Film Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Electrical Instability of Single-Walled Carbon Nanotube Network Thin-Film Transistors

2021 ◽  
Vol 21 (7) ◽  
pp. 3938-3942
Author(s):  
Ji-Hoon Choi ◽  
Hyeonju Lee ◽  
Jin-Hyuk Bae ◽  
Jaehoon Park
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Structural Defects ◽  
Water Molecules ◽  
Single Walled Carbon Nanotube ◽  
Atmospheric Air ◽  
Single Walled Carbon ◽  
Electrical Instability

The electrical instability of single-walled carbon nanotube (SWCNT) network-based thin-film transistors is investigated in atmospheric air and under vacuum. Atomic force microscopy images show that the nanotube bundles form X-type and Y-type nodes in the SWCNT-networkfilm. The Raman spectrum reveals that the structural defects in the SWCNTs are negligible. The fabricated SWCNT-network TFTs operate in a p-channel accumulation mode both in air and under vacuum. In contrast, TFTs exposed to atmospheric air environment exhibit lower drain currents and larger hysteresis compared with the vacuum environment case. An analysis of the time-dependent characteristic degradation of the SWCNT-network TFTs also demonstrates that the initial decay of the drain current in atmospheric air environment is more acute than that under vacuum. These results can be explained in terms of the hole-trapping behavior of the water molecules near the nanotubes or at the SWCNT/dielectric interface as well as the compensation effect of the electrons donated by water molecules with free holes in the SWCNT-networkfilm.

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