High-lying thermally excited subbands of two-dimensional electron gases in GaAs/AlGaAs heterojunction for modulation-doped field-effect transistor
Keyword(s):
1986 ◽
Vol 33
(5)
◽
pp. 707-711
◽
Keyword(s):
1986 ◽
pp. 238-251
◽
2006 ◽
Keyword(s):
Keyword(s):
1984 ◽
Vol 23
(Part 2, No. 3)
◽
pp. L150-L152
◽