Time-resolved photoluminescence studies of cross-well transport in a biased GaAs/AlGaAs multiple quantum well p-i-n structure

1997 ◽  
Vol 82 (2) ◽  
pp. 712-717 ◽  
Author(s):  
J. S. Massa ◽  
G. S. Buller ◽  
A. C. Walker
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

scholarly journals Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl
Keyword(s):  
Quantum Well ◽  
Electric Field Distribution ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Piezoelectric Field ◽  
Piezoelectric Fields ◽  
Time Resolved Photoluminescence

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.

Time Resolved Photoluminescence from Patterned GaAs/AlGaAs Multiple Quantum Well Structures

1993 ◽  
Vol 326 ◽  
Author(s):  
Xuelong Cao ◽  
Ahn Goo Choo ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
P. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Time Resolved Photoluminescence

Photoluminescence Properties Of Gan/AlGaN Multiple Quantum Well Microdisks

1997 ◽  
Vol 482 ◽  
Author(s):  
R. A. Mair ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
B. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Fold Increase ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Transition Intensity ◽  
Exciton Transition ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

AbstractAn array of microdisks with diameter of about 9 μm and spacing of 50 μm has been fabricated by dry etching from a 50 Å/50 Å GaN/AlxGa1-xN (x∼ 0.07) multiple quantum well (MQW) structure grown by reactive molecular beam epitaxy. The as-grown MQWs and the microdisk structures have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. PL emission spectra and decay dynamics were measured at various temperatures and pump intensities. With respect to the original MQWs, we observe strong enhancement of the transition intensity and lifetime for both the intrinsic and barrier transitions. The intrinsic transition is excitonic at low temperatures and exhibits an approximate 10 fold increase in both lifetime and PL intensity upon formation of the microdisks. The exciton transition magnitude diminishes rapidly with increased temperature however, while the enhanced lifetime shows little change. At room temperature the dominant GaN well transition is found to be band-to-band in nature as evidenced by effective band gap shrinkage and band-filling effects seen within the PL spectrum. The implications of our results to III-Nitride microdisk lasers are discussed.

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