Energy levels in finite barrier triangular and arrowhead-shaped quantum wires

1997 ◽  
Vol 81 (12) ◽  
pp. 7885-7889 ◽  
Author(s):  
Samita Gangopadhyay ◽  
B. R. Nag
Keyword(s):  
Quantum Wires ◽  
Energy Levels ◽  
Finite Barrier

Energy Levels in Quantum Wires with Finite Barrier Potential

1993 ◽  
Vol 179 (2) ◽  
pp. 463-471 ◽  
Author(s):  
B. R. Nag ◽  
Samita Gangopadhyay
Keyword(s):  
Quantum Wires ◽  
Energy Levels ◽  
Barrier Potential ◽  
Finite Barrier

scholarly journals Energy Levels in Nanowires and Nanorods with a Finite Potential Well

2020 ◽  
Vol 2020 ◽  
pp. 1-12
Author(s):  
G. Gulyamov ◽  
A. G. Gulyamov ◽  
A. B. Davlatov ◽  
Kh. N. Juraev
Keyword(s):  
Electron Energy ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Energy Levels ◽  
Electron Energy Spectrum ◽  
Constant Thickness ◽  
Potential Well ◽  
Discrete Level ◽  
Effective Masses ◽  
Internal Radius

The energy of electrons and holes in cylindrical quantum wires with a finite potential well was calculated by two methods. An analytical expression is approximately determined that allows one to calculate the energy of electrons and holes at the first discrete level in a cylindrical quantum wire. The electron energy was calculated by two methods for cylindrical layers of different radius. In the calculations, the nonparabolicity of the electron energy spectrum is taken into account. The dependence of the effective masses of electrons and holes on the radius of a quantum wires is determined. An analysis is made of the dependence of the energy of electrons and holes on the internal and external radii, and it is determined that the energy of electrons and holes in cylindrical layers with a constant thickness weakly depends on the internal radius. The results were obtained for the InP/InAs heterostructures.

Energy levels of impurity magnetopolarons in parabolic quantum wires

1998 ◽  
Vol 238 (1) ◽  
pp. 66-72 ◽  
Author(s):  
T.C. Au-Yeung ◽  
C.H. Kam ◽  
Z.F. Shi ◽  
M. Rajesh ◽  
R.A. Straughan
Keyword(s):  
Quantum Wires ◽  
Energy Levels

Hartree-like calculations of energy levels in quantum wires

1994 ◽  
Vol 91 (1) ◽  
pp. 39-43 ◽  
Author(s):  
G. Bastard ◽  
J.Y. Marzin
Keyword(s):  
Quantum Wires ◽  
Energy Levels

scholarly journals Theory of interacting parallel quantum wires

1995 ◽  
Vol 73 (5-6) ◽  
pp. 357-364 ◽  
Author(s):  
Yinlong Sun ◽  
George Kirczenow
Keyword(s):  
Energy Level ◽  
Density Functional ◽  
Transverse Energy ◽  
Quantum Wires ◽  
Energy Levels ◽  
Electron Systems ◽  
Coulomb Interactions ◽  
Functional Theory ◽  
Fermionic Systems ◽  
Theoretical Results

We present self-consistent numerical calculations of the electronic structure of parallel Coulomb-confined quantum wires, based on the Hohenberg–Kohn–Sham density functional theory of inhomogeneous electron systems. We find that the corresponding transverse energy levels of two parallel wires lock together when the wires' widths are similar and their separation is not too small. This energy-level locking is an effect of Coulomb interactions and of the density of states singularities that are characteristic of quasi-one-dimensional fermionic systems. In dissimilar parallel wires, level lockings are much less likely to occur. Energy-level locking in similar wires persists to quite large wire separations, but is gradually suppressed by inter-wire tunneling when the separation becomes small. The experimental implications of these theoretical results are discussed.

Structure and Photoluminescence Investigations of Self-Organized InAs/GaAs Quantum Wires

2009 ◽  
Vol 79-82 ◽  
pp. 1707-1710
Author(s):  
Ling Min Kong ◽  
Cun Xi Zhang ◽  
Rui Wang ◽  
Shi Lai Wang
Keyword(s):  
Quantum Wires ◽  
Energy Levels ◽  
Dynamical Behavior ◽  
Time Resolved ◽  
Force Microscopy ◽  
Long Wavelength ◽  
Self Organized ◽  
Atomic Force ◽  
Two Samples ◽  
Localized Excitons

Self –organized InAs quantum wires (QWRs) were fabricated on the step edges of GaAs (331)A surface by molecular beam epitaxy (MBE). The atomic force microscopy (AFM) results show that the lateral size of InAs QWRs is 90 nm while the size along the step lines increasing with the thicknesses of InAs layers, amounting to 1100nm. The height of InAs QWRs varies from 7.9nm to 13nm. Photoluminescence (PL) measurements on the two samples were explored and an obvious PL peak around 967 nm was observed at 25 K. The PL intensity decreases as the temperature increases, and it will vanish above 60 K. However, the QWR sample with thicker InAs layer emits a long emission of 1100 nm -1400 nm as the temperature rises above 50 K, and a longer emission of 1400-1600nm as the temperature approaches to 100 K. We considered that the complex photoluminescence spectra were originated from the multiple energy steps. The carrier migration among the different QWRs structures intensified with temperature, and the chance rate from the higher energy levels to the lower ones which generated a stronger emission of long wavelength. The carrier dynamics of QWR samples were measured by using time resolved PL (TRPL) spectra from 25 K to 100 K. The PL decay time in the QWR structure at longer emission was found to be independent of the temperature as T<100 K, showing a typical dynamical behavior of the localized excitons.

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