Characterization of ferroelectric lead zirconate titanate films by scanning force microscopy

1997 ◽  
Vol 81 (11) ◽  
pp. 7480-7491 ◽  
Author(s):  
Genaro Zavala ◽  
Janos H. Fendler ◽  
Susan Trolier-McKinstry
Keyword(s):  
Lead Zirconate Titanate ◽  
Scanning Force Microscopy ◽  
Lead Zirconate ◽  
Force Microscopy ◽  
Zirconate Titanate ◽  
Scanning Force

Ferroelectric domains in coarse-grained lead zirconate titanate ceramics characterized by scanning force microscopy

2003 ◽  
Vol 18 (8) ◽  
pp. 1777-1786 ◽  
Author(s):  
J. Muñoz-Saldaña ◽  
M. J. Hoffmann ◽  
G. A. Schneider
Keyword(s):  
Lead Zirconate Titanate ◽  
Domain Walls ◽  
Scanning Force Microscopy ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Pzt Ceramics ◽  
Force Microscopy ◽  
Zirconate Titanate ◽  
Domain Configuration ◽  
Scanning Force

Ferroelectric domain configurations in silver- and lanthanum-doped lead zirconate titanate (PZT) ceramics were characterized by scanning force microscopy using contact as well as piezoelectric response force [i.e., piezoelectric force microscopy (PFM)] modes. Coarse crystallites of hard and soft PZT ceramics (12 μm in Ag-PZT and 30 μm in La-PZT average grain size, respectively) with surface oriented in the {001} planes were chosen to characterize the domain configuration. Results show the conventional right-angled domain structures, which correspond to the {110} twin-related 90° and 180° domains of homogeneous width from 50 to 150 nm. The ability of PFM to image the orientation of pure in-plane arrays of domains (containing 90°-aa- and 180°-aa-types of domain boundaries) is highlighted, and a more detailed notation for in-plane domains is proposed. In addition to such periodical domain arrays, other ordered domains were found, having a misfit of 26° with respect to the{110} domain walls and the {100} surface. This array of domain walls could not be predicted with a geometrical analysis of the intersection of domain walls at the surface according to the conventional spatial array of {110} crystallographic planes. It could be explained only with {210} planes being the domain walls. The reason for this unconventional domain configuration is explained with the clamped conditions of the investigated crystallites in the polycrystalline material.

Paste Extrusion 3D Printing and Characterization of Lead Zirconate Titanate Piezoelectric Ceramics

2021 ◽  
Author(s):  
Samuel E. Hall ◽  
Jaime E. Regis ◽  
Anabel Renteria ◽  
Luis A. Chavez ◽  
Luis Delfin ◽  
...  
Keyword(s):  
3D Printing ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Ceramics ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Paste Extrusion

Characterization of metal decorated protein templates by scanning electron/scanning force microscopy and microanalysis

2004 ◽  
Vol 36 (8) ◽  
pp. 720-723 ◽  
Author(s):  
Wilhelm Habicht ◽  
Silke Behrens ◽  
Jin Wu ◽  
Eberhard Unger ◽  
Eckhard Dinjus
Keyword(s):  
Scanning Force Microscopy ◽  
Force Microscopy ◽  
Scanning Force ◽  
Scanning Electron

scholarly journals The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

2012 ◽  
Vol 3 ◽  
pp. 722-730 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Xavier Obradors ◽  
Carmen Ocal
Keyword(s):  
Memory Effect ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Versatile Tool ◽  
Scanning Force ◽  
Memristor Device

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.

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