Refractive index measurements of MgZnCdSe II–VI compound semiconductors grown on InP substrates and fabrications of 500–600 nm range MgZnCdSe distributed Bragg reflectors

1997 ◽  
Vol 81 (11) ◽  
pp. 7575-7579 ◽  
Author(s):  
Toshihiro Morita ◽  
Hiroyuki Shinbo ◽  
Takeshi Nagano ◽  
Ichirou Nomura ◽  
Akihiko Kikuchi ◽  
...  
Keyword(s):  
Refractive Index ◽  
Compound Semiconductors ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Inp Substrates ◽  
Nm Range

Optimal Growth of InGaAs/InAlAs Distributed Bragg Reflectors Lattice-matched on InP Substrates

1995 ◽  
Vol 417 ◽  
Author(s):  
S. W. Choi ◽  
J. H. Lee ◽  
J. H. Baek ◽  
E. H. Lee ◽  
B. Lee
Keyword(s):  
High Performance ◽  
Optimal Growth ◽  
Bragg Reflector ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Precise Control ◽  
Inp Substrates ◽  
Sharp Interfaces ◽  
Laser Reflectometry

AbstractDistributed Bragg reflectors composed of InGaAs/InAlAs alternating layers have been grown on InP substrates by MOCVD. To obtain high performance, the growth condition has been traded off between surface roughness and crystal quality. Using in-situ laser reflectometry, the precise control of layer thickness and composition has been achieved for reproducible DBR growth. The optimal mirror performance and sharp interfaces have been observed in the DBR grown at 650'C. In order to avoid band-edge absorption 6% of Al has been added to In 0.53Ga0.47As to produce quarternary In0.53Ga 0.41Al 0.06As/InAlAs Bragg reflector exhibiting high reflectivity at 1.55 μm.

Effect of In as Surfactant on the Growth of AlN/GaN Distributed Bragg Reflectors by Metal Organic Vapor Phase Epitaxy

2008 ◽  
Vol 1108 ◽  
Author(s):  
L E Rodak ◽  
D Korakakis
Keyword(s):  
Refractive Index ◽  
Vapor Phase ◽  
Lattice Mismatch ◽  
Vapor Phase Epitaxy ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Organic Vapor ◽  
High Reflectivity ◽  
Metal Organic

AbstractNitride based Distributed Bragg Reflectors (DBRs) have several important applications in current nitride based optoelectronic devices. DBRs can be implemented in resonant cavity light emitting diodes (RCLEDs) to improve light extraction and obtain a more directional emission and in vertical cavity surface emitting lasers (VCSELs) to achieve a lower threshold current. Due the large contrast in refractive index, AlN/GaN DRBs are practical for obtaining high reflectivity and wide bandwidth using relatively few periods. Cracking of the samples is typical for AlN/GaN DRBs due to the tensile strain which results from the 2.4% lattice mismatch and to the difference in thermal expansion coefficients. In addition to cracks, v-shaped defects may also arise in the surface due to surface undulation from stored elastic misfit strain or from threading dislocations that result in scattering and diffraction. Several techniques to reduce the number of cracks and defects have been investigated to obtain smooth surface morphology and high reflectivity, e.g. superlattices to reduce the strain or the growth of AlInGaN/GaN DBRs that offer less lattice mismatch but also lower refractive index contrast. In this work, results of the use of Indium (In) as a surfactant in Metal Organic Vapor Phase Epitaxy (MOVPE) will be discussed. This study addresses AlN/GaN DBR structures designed for peak reflectivity around 465 nm. During the AlN layers’ growth, trimethylindium was introduced to the system and resulted in a reduction of surface cracks. Results of growths at In flow rates are reported and discussed.

scholarly journals Solution processed high refractive index contrast distributed Bragg reflectors

2016 ◽  
Vol 4 (20) ◽  
pp. 4532-4537 ◽  
Author(s):  
Miguel Anaya ◽  
Andrea Rubino ◽  
Mauricio E. Calvo ◽  
Hernán Míguez
Keyword(s):  
Refractive Index ◽  
Spectral Range ◽  
High Refractive Index ◽  
Dielectric Films ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Solution Processed ◽  
Refractive Index Contrast ◽  
Number Of Layers ◽  
Index Contrast

We have developed a method to alternate porous and dense dielectric films in order to build high refractive index contrast distributed Bragg reflectors (DBRs) capable of reflecting very efficiently in a targeted spectral range employing a small number of layers in the stack.

AlN/GaN Distributed Bragg Reflectors Grown via Metal Organic Vapor Phase Epitaxy using GaN Insertion Layers

2012 ◽  
Vol 1396 ◽  
Author(s):  
L. E. Rodak ◽  
J. Peacock ◽  
J. Justice ◽  
D. Korakakis
Keyword(s):  
Refractive Index ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Material System ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Organic Vapor ◽  
High Reflectivity ◽  
Short Period ◽  
Metal Organic

ABSTRACTDistributed Bragg Reflectors (DBRs) are an important component of various optoelectronic devices for ultra violet and visible wavelengths. In the III-Nitride material system, Aluminum Nitride (AlN) and Gallium Nitride (GaN) offer a large contrast in refractive index and are therefore well suited for fabricating DBRs with high reflectivity and wide bandwidths using relatively few periods. However, the large lattice and thermal mismatch leads to cracking in these heterostructures. In this work short period superlattice layers have been used to fabricate high reflectivity (> 94%) nitride based DBRs via Metal Organic Vapor Phase Epitaxy. Short period AlN/GaN superlattices containing three to four monolayers of GaN have been employed as the low refractive index layer in DBRs to minimize cracking. Using this technique, crack-free DBRs reflecting from 440-475 nm with up to 25 periods have been fabricated. The technique has been proven to be versatile and resulted in large area yield DBRs grown on a variety of different sapphire substrates.

scholarly journals Distributed Bragg reflectors from colloidal trilayer flake solutions

APL Photonics ◽  
2021 ◽  
Vol 6 (2) ◽  
pp. 026104
Author(s):  
Mirela Malekovic ◽  
Esteban Bermúdez-Ureña ◽  
Ullrich Steiner ◽  
Bodo D. Wilts
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors
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