Nonvolatile memory characteristics of organic thin film transistors using poly(2-hydroxyethyl methacrylate)-based polymer multilayer dielectric

2011 ◽  
Vol 99 (14) ◽  
pp. 143308 ◽  
Author(s):  
Ying-Chih Chen ◽  
Yan-Kuin Su ◽  
Hsin-Chieh Yu ◽  
Chun-Yuan Huang ◽  
Tsung-Syun Huang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Organic Thin Film Transistors ◽  
Hydroxyethyl Methacrylate ◽  
Organic Thin Film ◽  
Memory Characteristics ◽  
Multilayer Dielectric

Organic Nonvolatile Memory Based on Low Voltage Organic Thin Film Transistors with Polymer Gate Electrets

2011 ◽  
Vol 158 (3) ◽  
pp. H277 ◽  
Author(s):  
Bo-Liang Yeh ◽  
Yu-Hao Chen ◽  
Liang-Yun Chiu ◽  
Jr-Wei Lin ◽  
Wei-Yu Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

scholarly journals Carbon Nanocrystal-Based Organic Thin-Film Transistors for Nonvolatile Memory Nanodevices

2009 ◽  
Vol 7 ◽  
pp. 665-668 ◽  
Author(s):  
Khairul A. Mohamad ◽  
Yoshihiro Tada ◽  
Takefumi Miura ◽  
Katsuhiro Uesugi ◽  
Hisashi Fukuda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Photo-Induced Threshold and Onset Voltage Shifts in Organic Thin-Film Transistors

2013 ◽  
Vol E96.C (11) ◽  
pp. 1360-1366 ◽  
Author(s):  
Ichiro FUJIEDA ◽  
Tse Nga NG ◽  
Tomoya HOSHINO ◽  
Tomonori HANASAKI
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Onset Voltage
Sign in / Sign up

Export Citation Format

Share Document