Electron paramagnetic resonance study of amorphous silicon produced by Kr+ion implantation into silicon

1997 ◽  
Vol 81 (8) ◽  
pp. 3453-3456 ◽  
Author(s):  
B. Rakvin ◽  
B. Pivac ◽  
R. Reitano
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Electron Paramagnetic Resonance Study ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

Electron Paramagnetic Resonance Study of Ion-Implanted Photorefractive Crystals

1997 ◽  
Vol 504 ◽  
Author(s):  
A. Darwish ◽  
D. Ila ◽  
E. K. Willams ◽  
D. B. Poker ◽  
D. K. Hensley
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Ion Implantation ◽  
Room Temperature ◽  
Electron Paramagnetic Resonance Study ◽  
Paramagnetic Resonance ◽  
Photorefractive Crystals ◽  
Laser Illumination ◽  
Epr Signal ◽  
Electron Paramagnetic

ABSTRACTThe effect of the ion implantation (Fe) on LiNbO3, MgO, and A12O3 crystals is studied using electron paramagnetic resonance (EPR). EPR measurements on these crystals were performed as a function of fluence at room temperature. The fluence was 1 × 1014 and 1 × 1016 ions/cm2. The unpaired carrier concentration increases with increasing fluence. The photosensitivity of these crystals was determined by observing in situ the effect of the laser illumination on the EPR signal and measuring the decay and the growth of the EPR signal. The EPR signal of Fe3+ was found to decrease in both MgO, and Al2O3; and was found to increase in LiNbO3. This indicated that in case of MgO, and A12O3 Fe3+ will transfer into Fe2+/Fe4+, but in case of LiNbO3 Fe2+/ Fe4+ will transfer into Fe3+; increasing the EPR signal. This was found primary due to some Fe2+ and Fe4+ ions, which is not intentionally doped on the LiNbO3 crystal but exist as a defect on the crystal.

Sign in / Sign up

Export Citation Format

Share Document