Emission properties of explosive field emission cathodes

2011 ◽  
Vol 18 (10) ◽  
pp. 103108 ◽  
Author(s):  
Amitava Roy ◽  
Ankur Patel ◽  
Rakhee Menon ◽  
Archana Sharma ◽  
D. P. Chakravarthy ◽  
...  
2004 ◽  
Vol 95 (3) ◽  
pp. 1537-1549 ◽  
Author(s):  
Y. Gotoh ◽  
M. Nagao ◽  
D. Nozaki ◽  
K. Utsumi ◽  
K. Inoue ◽  
...  

Author(s):  
S.A. Bagdasaryan ◽  
S.A. Nalimov

To create field emission cathodes (autocathodes) used in the manufacture of displays and other devices, carbon nanowalls (CNW) are promising. The CNW layers are a porous material consisting of curved plates formed by graphene layers. The industrial use of CNW autocathodes is impeded by the heterogeneity and instability of the magnitude and density of the cathode current. To improve the characteristics of autocathodes, an AlN film is formed on the surface of the emitting substance, which also has the property of field emission. CNW was obtained from a gas mixture of H2 and CH4 activated by a dc glow discharge. The CNW layers were deposited on silicon substrates and substrates representing a layered structure made by forming an opal matrix (OM) layer on a Si substrate. AlN films with controlled composition and structure were prepared by RF magnetron reactive sputtering. CNW layers with a thickness of > 4 μm were obtained by successive growth of two CNW layers (Si/CNW/CNW structure). An additional CNW layer was also grown on the surface of the first layer coated with Ni (Si/CNW/Ni/CNW structure). AlN films were grown on a CNW layer (Si/CNW/AlN and Si/OM/Ni/CNW/AlN structures). It is shown that CNW plates are formed from graphene layers partially connected by atomic bonds (up to 30 layers) packed in a hexagonal lattice, and AlN films consisted of amorphous and axially textured crystalline phases. The current-voltage characteristics of the autocathodes were measured in a pulsed mode at a pressure of ~10−3 Pa. The Si/CNW/CNW structures are characterized by a threshold of autoemission of ≤ 3.6 V/μm and a high density of centers of emission. The current-voltage characteristics of the layered structures Si/CNW/AlN, Si/OM/Ni/CNW and Si/OM/Ni/CNW /AlN showed better emission properties compared to the Si/CNW structure. The current-voltage characteristics considered make it possible to predict the structure and composition of the emitting layer to improve the operational characteristics of multilayer autocathodes.


2007 ◽  
Vol 14 (05) ◽  
pp. 969-972
Author(s):  
T. CHEN ◽  
Z. SUN ◽  
L. L. WANG ◽  
Y. W. CHEN ◽  
P. S. GUO ◽  
...  

As the carbon nanotubes (CNTs) films are applied to the field emission cathodes in the vacuum devices, heat treatment in the range of 400°C–500°C is often conducted during the device sealing process, especially for glass-based devices. The annealing temperature effect on the field emission of the CNT films prepared by chemical vapor deposition is investigated. The CNT film annealed at 400°C in air contains less amorphous carbon phase, and shows better field emission properties comparing to the as-grown CNT film. Annealing at 450°C causes serious oxidative damage along the tube walls, resulting in the poor field emission performance. The CNTs annealed at 500°C are all burned out. The experiment shows that the sealing temperature at 400°C or below can be conducted in air, while the sealing temperature above 400°C should be done in N 2 or Ar ambient.


2001 ◽  
Vol 685 ◽  
Author(s):  
A.G Chakhovskoi ◽  
N.N Chubun ◽  
C.E. Hunt ◽  
A.N Obraztsov ◽  
A.P. Volkov

AbstractPlanar field-emission cathode structures consisting of nanostructured carbon flakes have been investigated as an electron source for flat panel display application.Layers of nanoflakes were grown on silicon and molybdenum substrates using a high- temperature pyrolitic plasma-assisted CVD method. The result is a vertically oriented nanocluster layer of 1-2 micrometer height chemically bonded with the substrates. Additional orientation of the flakes, occurring during the first activation of the cathodes, was observed.Field emission properties of the emitters were studied in a vacuum chamber and in sealed flat-panel prototype devices with non-patterned low-voltage phosphor screens. Emitters with an area up to 1 square inch were tested under DC currents up to 100 microamps in diode mode. Anode bias up to 1.5 kV was applied. Current fluctuations of 1-2% were achieved using loading resistor.


2013 ◽  
Vol 9 (5) ◽  
pp. 619-623 ◽  
Author(s):  
Shama Parveen ◽  
Samina Husain ◽  
Avshish Kumar ◽  
Javid Ali ◽  
Mubashshir Husain ◽  
...  

2006 ◽  
Vol 14 (2-3) ◽  
pp. 151-164 ◽  
Author(s):  
A. V. Okotrub ◽  
L. G. Bulusheva ◽  
V. V. Belavin ◽  
A. G. Kudashov ◽  
A. V. Gusel'nikov ◽  
...  

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