Dirac cone and double zero materials

2011 ◽  
Author(s):  
C. T. Chan ◽  
Xueqin Huang ◽  
Yun Lai ◽  
Zhi Hong Hang ◽  
Huihuo Zheng ◽  
...  
Keyword(s):  
Dirac Cone ◽  
Double Zero

L'option double zéro et le sort de l'Europe

1988 ◽  
Vol 53 (1) ◽  
pp. 73-78
Author(s):  
Youri Davydov
Keyword(s):  
Double Zero

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Honeycomb Lattice ◽  
Theoretical Studies ◽  
Fabrication Technology ◽  
Dirac Cone ◽  
Free Standing ◽  
Silicene Nanoribbons ◽  
Effect Transistor

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

Ordered boron phosphorus codoped graphene realizing widely tunable quasi Dirac-cone gap

2021 ◽  
Vol 9 (12) ◽  
pp. 4316-4321
Author(s):  
L.-B. Meng ◽  
S. Ni ◽  
Z. M. Zhang ◽  
S. K. He ◽  
W. M. Zhou
Keyword(s):  
Density Functional Theory ◽  
Density Functional ◽  
Density Functional Theory Calculation ◽  
Dirac Cone ◽  
Functional Theory ◽  
Theory Calculation

Density functional theory calculation predicts a novel ordered boron phosphorus codoped graphene realizing a widely tunable Dirac-cone gap.

scholarly journals Emergent flat band electronic structure in a VSe2/Bi2Se3 heterostructure

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Turgut Yilmaz ◽  
Xiao Tong ◽  
Zhongwei Dai ◽  
Jerzy T. Sadowski ◽  
Eike F. Schwier ◽  
...  
Keyword(s):  
Dirac Point ◽  
Electronic States ◽  
Quantum States ◽  
Photoemission Spectroscopy ◽  
Flat Band ◽  
Strongly Correlated ◽  
Dirac Cone ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Topological Materials ◽  
Photoemission Study

AbstractFlat band electronic states are proposed to be a fundamental tool to achieve various quantum states of matter at higher temperatures due to the enhanced electronic correlations. However, materials with such peculiar electronic states are rare and often rely on subtle properties of the band structures. Here, by using angle-resolved photoemission spectroscopy, we show the emergent flat band in a VSe2 / Bi2Se3 heterostructure. Our photoemission study demonstrates that the flat band covers the entire Brillouin zone and exhibits 2D nature with a complex circular dichroism. In addition, the Dirac cone of Bi2Se3 is not reshaped by the flat band even though they overlap in proximity of the Dirac point. These features make this flat band distinguishable from the ones previously found. Thereby, the observation of a flat band in the VSe2 / Bi2Se3 heterostructure opens a promising pathway to realize strongly correlated quantum effects in topological materials.

Can borophenes with Dirac cone be promising electrodes for supercapacitors

2021 ◽  
pp. 150154
Author(s):  
Zhen-Long Lv ◽  
Hong-Ling Cui ◽  
Hui Wang ◽  
Xiao-Hong Li
Keyword(s):  
Dirac Cone ◽  
Electrodes For Supercapacitors
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