Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling

2011 ◽  
Vol 99 (13) ◽  
pp. 132101
Author(s):  
E. Scalise ◽  
M. Houssa ◽  
G. Pourtois ◽  
V. V. Afanas’ev ◽  
A. Stesmans
2019 ◽  
Vol 21 (3) ◽  
pp. 1564-1571
Author(s):  
Enrique Montes ◽  
Giuseppe Foti ◽  
Héctor Vázquez

We use inelastic electron tunneling spectroscopy (IETS) first-principles simulations to identify and characterize the different vibrational modes of single conjugated molecules bonded to Au metal electrodes.


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