scholarly journals Direct comparison of domain wall behavior in permalloy nanowires patterned by electron beam lithography and focused ion beam milling

2011 ◽  
Vol 110 (8) ◽  
pp. 083904 ◽  
Author(s):  
M. A. Basith ◽  
S. McVitie ◽  
D. McGrouther ◽  
J. N. Chapman ◽  
J. M. R. Weaver
Keyword(s):  
Electron Beam ◽  
Domain Wall ◽  
Electron Beam Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Focused Ion Beam Milling

Fabrication of coaxial plasmonic crystals by focused ion beam milling and electron-beam lithography

2013 ◽  
Vol 100 ◽  
pp. 192-194 ◽  
Author(s):  
Xiaoxiao Jiang ◽  
Qiongchan Gu ◽  
Fengwen Wang ◽  
Jiangtao Lv ◽  
Zhenhe Ma ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Plasmonic Crystals ◽  
Focused Ion Beam Milling

Patterning of permalloy thin films by means of electron-beam lithography and focused ion-beam milling

2008 ◽  
Vol 44 (4-5) ◽  
pp. 699-704 ◽  
Author(s):  
S. Getlawi ◽  
M.R. Koblischka ◽  
U. Hartmann ◽  
C. Richter ◽  
T. Sulzbach
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Permalloy Thin Films ◽  
Focused Ion Beam Milling

Focused Ion Beam Nanofabrication: A Comparison with Conventional Processing Techniques

2006 ◽  
Vol 6 (3) ◽  
pp. 661-668 ◽  
Author(s):  
R. M. Langford
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Side Wall ◽  
Feature Size ◽  
Diverse Range ◽  
Minimum Feature Size ◽  
Nano Science ◽  
Processing Techniques

Focused ion beam and dual platform systems are versatile tools for nanoengineering and nano-science applications. These systems complement conventional processing methods and can be used to prototype and modify a diverse range of nano-devices and sensors. This article discusses FIB nanofabrication and compares it with other fabrication techniques such as electron beam lithography and reactive ion etching. Aspects such as the minimum feature size and side wall profiles are discussed and compared. In addition, the limitations and detrimental effects of FIB processes are discussed.

Submicrometer Shadow Mask Fabricated by Anisotropic Wet Etching and Focused Ion Beam Techniques for Nanofabrication in UHV

1998 ◽  
Vol 12 (14n15) ◽  
pp. 597-605 ◽  
Author(s):  
Hanyu Sheng ◽  
Daisuke Fujita ◽  
Taizo Ohgi ◽  
Hiroshi Okamoto ◽  
Hitoshi Nejoh
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Wet Etching ◽  
Ultra High Vacuum ◽  
New Method ◽  
Shadow Mask ◽  
Pattern Size

We have developed a new method for fabricating a silicon submicrometer shadow mask for nanofabrication in ultra-high vacuum. Combining KOH anisotropic wet etching, electron beam lithography, reactive ion etching and focused ion beam techniques, a pattern size of 2.5×2.5 mm2 and opaque part about 1 μm can be obtained.

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