Exciton linewidth due to scattering by free carriers in semiconducting quantum well structures: Finite confining potential model

1997 ◽  
Vol 81 (5) ◽  
pp. 2236-2240 ◽  
Author(s):  
Tong San Koh ◽  
Yuan Ping Feng ◽  
Harold N. Spector
Keyword(s):  
Quantum Well ◽  
Potential Model ◽  
Quantum Well Structures ◽  
Free Carriers ◽  
Confining Potential

Non-Equilibrium Carrier Dynamics in a-Si:H/a-SiC:H Multilayers

1992 ◽  
Vol 258 ◽  
Author(s):  
M. Petrauskas ◽  
J. Kolenda ◽  
A. Galeckas ◽  
R. Schwarz ◽  
F. Wang ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Quantum Well ◽  
Layer Thickness ◽  
Carrier Dynamics ◽  
Interface Roughness ◽  
Scattering Process ◽  
Transient Grating ◽  
Lateral Mobility ◽  
Quantum Well Structures ◽  
Free Carriers

ABSTRACTFor a series of a-Si:H/a-SiC:H quantum well structures and superlattices the diffusion coefficient for the lateral ambipolar motion of optically excited free carriers was measured using the transient grating technique. A significant dependence of the diffusion coefficient on the well layer thickness was found. With decreasing quantum well thickness the lateral mobility decreases. These observations may be explained assuming that scattering due to interface roughness is the dominant scattering process.

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