Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements

L. Dusseau; T. L. Randolph; R. D. Schrimpf; K. F. Galloway; F. Saigné; J. Fesquet; J. Gasiot; R. Ecoffet

doi:10.1063/1.364251

Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements

Journal of Applied Physics ◽

10.1063/1.364251 ◽

1997 ◽

Vol 81 (5) ◽

pp. 2437-2441 ◽

Cited By ~ 31

Author(s):

L. Dusseau ◽

T. L. Randolph ◽

R. D. Schrimpf ◽

K. F. Galloway ◽

F. Saigné ◽

...

Keyword(s):

Metal Oxide ◽

Dose Rate ◽

Field Effect ◽

Low Dose ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Low Dose Rate ◽

Dose Rate Effects ◽

Rate Effects

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Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions

Journal of Semiconductors ◽

10.1088/1674-4926/31/5/054004 ◽

2010 ◽

Vol 31 (5) ◽

pp. 054004 ◽

Cited By ~ 2

Author(s):

Lan Bo ◽

Guo Qi ◽

Sun Jing ◽

Cui Jiangwei ◽

Li Maoshun ◽

...

Keyword(s):

Metal Oxide ◽

Dose Rate ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dose Rate Effects ◽

Rate Effects

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Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment

Acta Physica Sinica ◽

10.7498/aps.59.1985 ◽

2010 ◽

Vol 59 (3) ◽

pp. 1985

Author(s):

He Bao-Ping ◽

Yao Zhi-Bin

Keyword(s):

Metal Oxide ◽

Prediction Model ◽

Dose Rate ◽

Low Dose ◽

Radiation Effect ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Space Environment ◽

Low Dose Rate

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Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor

Acta Physica Sinica ◽

10.7498/aps.60.068702 ◽

2011 ◽

Vol 60 (6) ◽

pp. 068702

Author(s):

Lan Bo ◽

Gao Bo ◽

Cui Jiang-Wei ◽

Li Ming ◽

Wang Yi-Yuan ◽

...

Keyword(s):

Dose Rate ◽

Field Effect ◽

Field Effect Transistor ◽

Low Dose ◽

Rate Sensitivity ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Low Dose Rate ◽

Effect Transistor ◽

P Type

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Relation between the Enhanced Low-Dose-Rate Effects of Metal Oxide Semiconductors and the Vacant Oxide Trap Densities of SiO2

Journal of the Korean Physical Society ◽

10.3938/jkps.54.800 ◽

2009 ◽

Vol 54 (2) ◽

pp. 800-804 ◽

Cited By ~ 2

Author(s):

D. H. Ko ◽

S. J. Kim ◽

K. W. Min ◽

S. W. Rhee

Keyword(s):

Metal Oxide ◽

Dose Rate ◽

Low Dose ◽

Metal Oxide Semiconductors ◽

Oxide Semiconductors ◽

Low Dose Rate ◽

Dose Rate Effects ◽

Rate Effects ◽

Oxide Trap

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2054 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2054-2057 ◽

Cited By ~ 21

Author(s):

Syunichi Watabe ◽

Shigetoshi Sugawa ◽

Akinobu Teramoto ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Evaluation Method ◽

Statistical Evaluation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Applied Physics Express ◽

10.7567/1882-0786/ab1b53 ◽

2019 ◽

Vol 12 (6) ◽

pp. 061003 ◽

Cited By ~ 1

Author(s):

Kidist Moges ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ultrahigh Temperature

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