Optical characterization of InGaAs–GaAs multiple quantum wells using variable angle spectroscopic ellipsometry for designing tunable modulators

1997 ◽  
Vol 81 (1) ◽  
pp. 497-501 ◽  
Author(s):  
S. K. Cheung ◽  
H. Wang ◽  
W. Huang ◽  
F. Jain
Keyword(s):  
Quantum Wells ◽  
Spectroscopic Ellipsometry ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Variable Angle ◽  
Variable Angle Spectroscopic Ellipsometry

Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition

Optical Characterization of a 20 Layer AlGaAs/GaAs Multiple Quantum Wells

2018 ◽  
Vol 73 (5) ◽  
pp. 632-637
Author(s):  
Luqman Ali ◽  
Janghyun Cho ◽  
Clare Chisu Byeon ◽  
Jin Dong Song ◽  
Hyun-Jun Jo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate

2017 ◽  
Vol 111 (11) ◽  
pp. 111101 ◽  
Author(s):  
Thomas Wunderer ◽  
Zhihong Yang ◽  
Martin Feneberg ◽  
Max Batres ◽  
Mark Teepe ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Characterization of an Asymmetric Triangular Multiple Quantum Well, by Variable Angle Spectroscopic Ellipsometry

1989 ◽  
Vol 160 ◽  
Author(s):  
Craig M. Herzinger ◽  
Paul G. Snyder ◽  
John A. Woollam ◽  
Keith Evans ◽  
C.E. Stutz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Multiple Quantum Well ◽  
Gaas Layer ◽  
Multiple Quantum ◽  
Bulk Gaas ◽  
Variable Angle ◽  
Variable Angle Spectroscopic Ellipsometry

AbstractVariable angle spectroscopic ellipsometry (VASE) was used to characterize a 20 period GaAs/Al(x)Ga(1-x)As multiple quantum well structure, grown by molecular beam epitaxy. The barriers were nominally 200 Å Al(.25)Ga(.75)As, and the well regions were grown to approximate a linearly graded composition, from x=0 to x=0.25, with total well width 200 Å. VASE data in the E1, E1,+Δ1. region were analyzed using four different models. It was founcЃ that the dielectric function of the cap GaAs layer was shifted to higher energy with respect to the bulk GaAs dielectric function.

scholarly journals Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters

2020 ◽  
Vol 3 (6) ◽  
pp. 5335-5342 ◽  
Author(s):  
Houqiang Xu ◽  
Jie’an Jiang ◽  
Yijun Dai ◽  
Mei Cui ◽  
Kuang-hui Li ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Ultraviolet C

Optical characterization of AlAs/GaInAs multiple quantum wells

1992 ◽  
Vol 12 (2) ◽  
pp. 207-210 ◽  
Author(s):  
M.I. Alonso ◽  
M. Garriga ◽  
G. Armelles ◽  
P. Castrillo ◽  
A. Ruiz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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