Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers

1997 ◽  
Vol 81 (4) ◽  
pp. 1708-1714 ◽  
Author(s):  
W. K. Liu ◽  
J. Winesett ◽  
Weiluan Ma ◽  
Xuemei Zhang ◽  
M. B. Santos ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Si Substrates

Trapping of Oxygen at Homoepitaxial Si-Si Interfaces Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 59 ◽  
Author(s):  
R. Hull ◽  
M. E. Twigg ◽  
J. C. Bean ◽  
J. M. Gibson ◽  
D. C. Joy
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Defect Density ◽  
High Density ◽  
Buffer Layers ◽  
Si Substrates ◽  
Preparation Conditions ◽  
Primary Model ◽  
Post Deposition

ABSTRACTInterfaces between Si substrates and epitaxial Si buffer layers grown by Molecular Beam Epitaxy (MBE) are shown to contain a high density of SiOx pockets for certain sustrate preparation conditions. It is also shown that post-deposition thermal annealing of these structures grown upon Czochralski wafers can lead to a greatly increased defect density at the interface. The primary model proposed for this increase is trapping of background oxygen diffusing from the bulk of the Czochralski substrate wafers.

Twinning in epilayers of CdTe on Si: Influence of ZnTe buffer layer and substrate misorientation

1995 ◽  
Vol 399 ◽  
Author(s):  
A. Gray ◽  
N.K. Dhar ◽  
W. Clark ◽  
P. Charlton ◽  
J.H. Dinan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

ABSTRACTX-ray diffraction spectra of CdTe epilayers grown with and without ZnTe buffer layers on <211> Si substrates by molecular beam epitaxy consist of 422 and 331 reflections. We interpret these as evidence for the existence of twins within the volume of a <211> oriented epilayer and show that twin volume is dependent on the ZnTe buffer layer and substrate misorientation.

Epitaxial Growth of AlN on Si Substrates with Intermediate 3C-SiC as Buffer Layers

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Q. Hong ◽  
H. M. Liaw ◽  
K. Linthicum ◽  
R. F. Davis ◽  
P. Fejes ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Region ◽  
Buffer Layers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Near Surface ◽  
Si Substrates ◽  
Gas Source ◽  
Sic Film

ABSTRACTSingle crystalline AlN was successfully grown on a 3C-SiC coated Si (111) substrate by organometallic vapor phase epitaxy. The 3C-SiC film was obtained via the conversion of the Si near-surface region to SiC using gas-source molecular beam epitaxy. The quality of the AlN was mainly controlled by that of the SiC. The effects of Si pits and SiC hillocks formed during the conversion on subsequent AlN growth are discussed. Process optimization is suggested to improve the SiC buffer layer for subsequent AlN deposition.

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

Sign in / Sign up

Export Citation Format

Share Document