Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopy

2011 ◽  
Vol 110 (6) ◽  
pp. 064302 ◽  
Author(s):  
Ts. Ivanov ◽  
V. Donchev ◽  
K. Germanova ◽  
P. F. Gomes ◽  
F. Iikawa ◽  
...  
2018 ◽  
Vol 26 (14) ◽  
pp. 18480 ◽  
Author(s):  
Lingling Ran ◽  
Haiyang Li ◽  
Wenzhi Wu ◽  
Yachen Gao ◽  
Zhijun Chai ◽  
...  

2009 ◽  
Vol 94 (10) ◽  
pp. 102109 ◽  
Author(s):  
L. Malikova ◽  
Todd Holden ◽  
M. Noemi Perez-Paz ◽  
M. Muñoz ◽  
M. C. Tamargo

2017 ◽  
Vol 6 (1) ◽  
pp. 80-86
Author(s):  
S. N. Saravanamoorthy ◽  
A. John Peter

Electronic and optical properties of Type-II lead based core/shell semiconducting quantum dots are reported. Binding energies of electron–hole pair, optical transition energies and the absorption coefficients are investigated taking into account the geometrical confinement in PbSe/PbS core/shell quantum dot nanostructure. The energies are obtained with the increase of shell thickness for various inner core radii. The probability densities of electron and hole wave functions of radial coordinate of the core PbSe and PbS shell quantum dots are presented. The optical transition energy with the spatial confinement is brought out. The electronic properties are obtained using variational approach whereas the compact density matrix method is employed for the nonlinear optical properties. The results show that (i) a decrease in binding energy is obtained when the shell thickness increases due to more separation of electron–hole pair and (ii) the energy band gap decreases with the increase in the shell thickness resulting in the reduction of the higher energy interband transitions.


2015 ◽  
Vol 1131 ◽  
pp. 60-63 ◽  
Author(s):  
Maetee Kunrugsa ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan

We study the GaSb/GaAs nanostructures (NSs) grown by droplet epitaxy technique with various Ga amounts. Ga amount deposited on the GaAs (001) substrate was varied between 3-5 ML to form the different size and density of liquid Ga droplets. The Sb flux was subsequently irradiated to crystallize the droplets. Morphology of GaSb NSs was investigated by atomic force microscopy (AFM). Quantum rings were obtained after crystallizing 3-ML Ga droplets, whereas some kind of quantum dots were formed after crystallizing 4-and 5-ML Ga droplets. The formation mechanisms leading to the different structure are discussed. The photoluminescence (PL) measurement was performed to examine the optical properties of GaSb/GaAs NSs.


2017 ◽  
Vol 90 (1) ◽  
pp. 52-58 ◽  
Author(s):  
Taichi Watanabe ◽  
Kohji Takahashi ◽  
Kunio Shimura ◽  
Hang-Beom Bu ◽  
Kim Hyeon-Deuk ◽  
...  

2001 ◽  
Vol 78 (5) ◽  
pp. 628-630 ◽  
Author(s):  
Benzhong Wang ◽  
Soo-Jin Chua

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