Formation of optical barriers with excellent thermal stability in single-crystal sapphire by hydrogen ion implantation and thermal annealing

2011 ◽  
Vol 99 (11) ◽  
pp. 111909 ◽  
Author(s):  
William T. Spratt ◽  
Mengbing Huang ◽  
Chuanlei Jia ◽  
Lei Wang ◽  
Vimal K. Kamineni ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Implantation ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Hydrogen Ion ◽  
Excellent Thermal Stability ◽  
Single Crystal Sapphire ◽  
Hydrogen Ion Implantation

Effects of Hydrogen Ion Implantation and Thermal Annealing on Structural and Optical Properties of Single-crystal Sapphire.

2011 ◽  
Vol 1354 ◽  
Author(s):  
William T. Spratt ◽  
Mengbing Huang ◽  
Chuanlei Jia ◽  
Lei Wang ◽  
Vimal K. Kamineni ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Ion Implantation ◽  
Single Crystal ◽  
Crystal Defects ◽  
Hydrogen Ion ◽  
Sensing Applications ◽  
Prism Coupling ◽  
Single Crystal Sapphire ◽  
Hydrogen Ion Implantation

ABSTRACTDue to its outstanding thermal and chemical stability, single-crystal sapphire is a crucial material for high-temperature optical sensing applications. The potential for using hydrogen ion implantation to fabricate stable, high temperature optical waveguides in single crystal sapphire is investigated in this work. Hydrogen ions were implanted in c-plane sapphire with energies of 35 keV and 1 MeV and fluences 1016-1017/cm2. Subsequent annealing was carried out in air at temperatures ranging from 500˚C to 1200˚C. Complementary techniques were used to characterize the samples, including ellipsometry and prism coupling to examine optical properties, Rutherford backscattering/ion channeling for crystal defects, and nuclear reaction analysis for hydrogen profiling. Several guiding modes were observed in H-implanted (1 MeV) samples annealed above 800˚C through prism coupling, and a maximum index modification of 3% was observed in the 35 keV samples and 1% in the 1 MeV samples through ellipsometry, with the 1 MeV index variation being confirmed through prism coupling. The possible causes of the index modifications, such as H related defects, as well as implications for tailoring the refractive index of sapphire are discussed.

The Influence Of Silicon Orientation On Surface Blistering Behaviors for Molecular Hydrogen Ion Implantation

2019 ◽  
Vol 34 (1) ◽  
pp. 1159-1164
Author(s):  
Yu Cheng Hsiao ◽  
Jenq-Horng Liang ◽  
Chih-Ming Lin
Keyword(s):  
Ion Implantation ◽  
Molecular Hydrogen ◽  
Hydrogen Ion ◽  
Hydrogen Ion Implantation

X-ray-emission study of the structure of Si:H layers formed by low-energy hydrogen-ion implantation

2002 ◽  
Vol 36 (5) ◽  
pp. 568-573 ◽  
Author(s):  
V. R. Galakhov ◽  
I. V. Antonova ◽  
S. N. Shamin ◽  
V. I. Aksenova ◽  
V. I. Obodnikov ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Hydrogen Ion ◽  
X Ray ◽  
Emission Study ◽  
Hydrogen Ion Implantation

scholarly journals Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process

AIP Advances ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 015045
Author(s):  
C.-M. Lim ◽  
Z. Zhao ◽  
K. Sumita ◽  
K. Toprasertpong ◽  
M. Takenaka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Implantation Dose ◽  
Hydrogen Ion ◽  
Insulator Layers ◽  
Hydrogen Ion Implantation

A model for trapping and re-emission at hydrogen ion implantation

1994 ◽  
Vol 211 (2) ◽  
pp. 127-134 ◽  
Author(s):  
A.A. Pisarev ◽  
S.K. Zhdanov ◽  
O.V. Ogorodnikova
Keyword(s):  
Ion Implantation ◽  
Hydrogen Ion ◽  
Hydrogen Ion Implantation
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