Temperature dependence of the refractive index of direct band gap semiconductors near the absorption threshold: Application to GaAs

1996 ◽  
Vol 80 (8) ◽  
pp. 4626-4631 ◽  
Author(s):  
Christian Tanguy
Keyword(s):  
Refractive Index ◽  
Temperature Dependence ◽  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band

SHIFT OF BAND GAP FROM DIRECT TO INDIRECT AND OPTICAL RESPONSE OF LiF UNDER PRESSURE

2013 ◽  
Vol 27 (09) ◽  
pp. 1350061 ◽  
Author(s):  
A. SAJID ◽  
G. MURTAZA ◽  
A. H. RESHAK
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Lithium Fluoride ◽  
Pressure Range ◽  
Pressure Effect ◽  
Indirect Transition ◽  
Direct Band Gap ◽  
Direct Band ◽  
Indirect Band Gap

We hereby are reporting the transition pressure at which lithium fluoride ( LiF ) compound transforms from direct band gap to indirect band gap insulator on the basis of FP-LAPW calculations. The fundamental band gap of LiF compound suffers direct to indirect transition at a pressure of 70 GPa. The study of the pressure effect on the optical properties e.g. dielectric function, reflectivity, refractive index and optical conductivity of LiF in the pressure between 0–100 GPa, shows that this pressure range is very critical for LiF compound as there are significant changes in the optical properties of this compound.

Temperature dependence of the direct band gap ofInxGa1−xAs (x=0.06 and 0.15)

1991 ◽  
Vol 44 (19) ◽  
pp. 10546-10550 ◽  
Author(s):  
Z. Hang ◽  
D. Yan ◽  
Fred H. Pollak ◽  
G. D. Pettit ◽  
J. M. Woodall
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band

Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be‐doped GaAsSb lattice matched to InP

1994 ◽  
Vol 65 (19) ◽  
pp. 2442-2444 ◽  
Author(s):  
K. G. Merkel ◽  
V. M. Bright ◽  
M. A. Marciniak ◽  
C. L. A. Cerny ◽  
M. O. Manasreh
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Transition Energies ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Donor Acceptor ◽  
Direct Band ◽  
Lattice Matched

scholarly journals Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitrideCu3N

2017 ◽  
Vol 95 (11) ◽  
Author(s):  
Max Birkett ◽  
Christopher N. Savory ◽  
Angela N. Fioretti ◽  
Paul Thompson ◽  
Christopher A. Muryn ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Small Temperature ◽  
Direct Band Gap ◽  
Direct Band ◽  
Small Temperature Dependence

scholarly journals Temperature dependence of the direct band gap of Si-containing carbon nitride crystalline films

1997 ◽  
Vol 56 (11) ◽  
pp. 6498-6501 ◽  
Author(s):  
D. Y. Lin ◽  
C. F. Li ◽  
Y. S. Huang ◽  
Y. C. Jong ◽  
Y. F. Chen ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Carbon Nitride ◽  
Direct Band Gap ◽  
Crystalline Films ◽  
Direct Band

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

Sign in / Sign up

Export Citation Format

Share Document