scholarly journals Pressure-induced phase transformations during femtosecond-laser doping of silicon

2011 ◽  
Vol 110 (5) ◽  
pp. 053524 ◽  
Author(s):  
Matthew J. Smith ◽  
Yu-Ting Lin ◽  
Meng-Ju Sher ◽  
Mark T. Winkler ◽  
Eric Mazur ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Phase Transformations ◽  
Laser Doping

Femtosecond laser-induced phase transformations in amorphous Cu77Ni6Sn10P7 alloy

2015 ◽  
Vol 117 (2) ◽  
pp. 023109 ◽  
Author(s):  
Y. Zhang ◽  
L. Liu ◽  
G. Zou ◽  
N. Chen ◽  
A. Wu ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Phase Transformations

scholarly journals The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation

2012 ◽  
Vol 112 (8) ◽  
pp. 083518 ◽  
Author(s):  
Matthew J. Smith ◽  
Meng-Ju Sher ◽  
Benjamin Franta ◽  
Yu-Ting Lin ◽  
Eric Mazur ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Phase Transformations ◽  
Laser Irradiation ◽  
Surface Texturing ◽  
Femtosecond Laser Irradiation

scholarly journals Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor

2013 ◽  
Vol 114 (4) ◽  
pp. 1009-1016 ◽  
Author(s):  
Matthew J. Smith ◽  
Meng-Ju Sher ◽  
Benjamin Franta ◽  
Yu-Ting Lin ◽  
Eric Mazur ◽  
...  
Keyword(s):  
Thin Film ◽  
Femtosecond Laser ◽  
Laser Doping ◽  
Dopant Incorporation ◽  
Dopant Precursor

Surface morphology and phase transformations of femtosecond laser-processed sapphire

2014 ◽  
Vol 288 ◽  
pp. 313-323 ◽  
Author(s):  
R. Vilar ◽  
S.P. Sharma ◽  
A. Almeida ◽  
L.T. Cangueiro ◽  
V. Oliveira
Keyword(s):  
Femtosecond Laser ◽  
Surface Morphology ◽  
Phase Transformations

scholarly journals Surface texturing of steel by femtosecond laser and accompanying structure/phase transformations

2020 ◽  
Vol 131 ◽  
pp. 106370
Author(s):  
M.V. Zhidkov ◽  
T.N. Vershinina ◽  
O.A. Golosova ◽  
S.I. Kudryashov ◽  
A.A. Ionin
Keyword(s):  
Femtosecond Laser ◽  
Phase Transformations ◽  
Surface Texturing ◽  
Structure Phase

Simultaneous Femtosecond Laser Doping and Surface Texturing for Implanting Applications

2015 ◽  
Vol 2 (9) ◽  
pp. 1500058 ◽  
Author(s):  
Xue-Qing Liu ◽  
Qi-Dai Chen ◽  
Rui Wang ◽  
Lei Wang ◽  
Xiao-Lin Yu ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Surface Texturing ◽  
Laser Doping

scholarly journals The influence of wavelength on phase transformations induced by picosecond and femtosecond laser pulses in GeSb thin films

2005 ◽  
Vol 98 (11) ◽  
pp. 113518 ◽  
Author(s):  
S. M. Wiggins ◽  
J. Bonse ◽  
J. Solis ◽  
C. N. Afonso ◽  
K. Sokolowski-Tinten ◽  
...  
Keyword(s):  
Thin Films ◽  
Femtosecond Laser ◽  
Phase Transformations ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses

The use of high-resolution FESEM to study solid-state phase transformations and reactions

1994 ◽  
Vol 52 ◽  
pp. 1028-1029
Author(s):  
P. G. Kotula ◽  
D. D. Erickson ◽  
C. B. Carter
Keyword(s):  
Solid State ◽  
High Resolution ◽  
Phase Transformations ◽  
High Efficiency ◽  
Sol Gel ◽  
Quantitative Information ◽  
Solid State Reactions ◽  
Critical Dimensions ◽  
Backscattered Electrons ◽  
Backscattered Electron

High-resolution field-emission-gun scanning electron microscopy (FESEM) has recently emerged as an extremely powerful method for characterizing the micro- or nanostructure of materials. The development of high efficiency backscattered-electron detectors has increased the resolution attainable with backscattered-electrons to almost that attainable with secondary-electrons. This increased resolution allows backscattered-electron imaging to be utilized to study materials once possible only by TEM. In addition to providing quantitative information, such as critical dimensions, SEM is more statistically representative. That is, the amount of material that can be sampled with SEM for a given measurement is many orders of magnitude greater than that with TEM.In the present work, a Hitachi S-900 FESEM (operating at 5kV) equipped with a high-resolution backscattered electron detector, has been used to study the α-Fe2O3 enhanced or seeded solid-state phase transformations of sol-gel alumina and solid-state reactions in the NiO/α-Al2O3 system. In both cases, a thin-film cross-section approach has been developed to facilitate the investigation. Specifically, the FESEM allows transformed- or reaction-layer thicknesses along interfaces that are millimeters in length to be measured with a resolution of better than 10nm.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

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