Growth of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition

1996 ◽  
Vol 80 (7) ◽  
pp. 4112-4115 ◽  
Author(s):  
K. Baskar ◽  
T. Soga ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Si Substrates ◽  
Metalorganic Chemical

High-Quality InSb Growth on GaAs and Si by Low-Pressure Metalorganic Chemical Vapor Deposition

1992 ◽  
Vol 281 ◽  
Author(s):  
Y. H. Choi ◽  
R. Sudharsanan ◽  
C. Besikci ◽  
E. Bigan ◽  
M. Razeghi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Metalorganic Chemical

ABSTRACTWe report the first InSb film growth on Si by low-pressure metalorganic chemical vapor deposition. High-quality layers of InSb have been grown on Si and GaAs substrates. InSb films displayed mirror-like morphology on both substrates. X-ray full width at half maximum of 171 arcsec on GaAs and 361 arcsec on Si for a InSb layer thickness of 3.1 μm were measured. Room-temperature Hall mobilities of 67,000 and 48,000 cm2/V.s with carrier concentration of 1.5×1016 and 2.3×1016 cm−3 have been achieved for InSb films grown on GaAs and Si substrates, respectively. A 4.8 μ-thick InSb film on GaAs exhibited mobility of 76,200 cm2/Vs at 240 K.

Principles and Applications of Metalorganic Chemical Vapor Deposition for the Growth of ih-V Compounds on Si Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
Russell D. Dupuis
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Si Substrates ◽  
Heteroepitaxial Layers ◽  
Metalorganic Chemical

AbstractThe use of the metalorganic chemical vapor deposition thin film materials technology in the heteroepitaxial growth of GaAs on Si substrates is of increasing interest for a wide variety of applications. This paper will describe the principles and applications of this materials technology and discuss possible future approaches to the growth of high-quality HI-V heteroepitaxial layers on Si substrates.

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

2011 ◽  
Vol 32 (9) ◽  
pp. 896-901 ◽  
Author(s):  
陈耀 CHEN Yao ◽  
王文新 WANG Wen-xin ◽  
黎艳 LI Yan ◽  
江洋 JIANG Yang ◽  
徐培强 XU Pei-qiang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Metalorganic Chemical

High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition

2020 ◽  
Vol 65 (1) ◽  
pp. 122-125
Author(s):  
I. S. Ezubchenko ◽  
M. Ya. Chernykh ◽  
I. O. Mayboroda ◽  
I. N. Trun’kin ◽  
I. A. Chernykh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Metalorganic Chemical

Development of Homoepitaxially Grown GaN Thin Film Layers on Freestanding Bulk m-plane Substrates by Metalorganic Chemical Vapor Deposition (MOCVD)

2007 ◽  
Vol 1040 ◽  
Author(s):  
Vibhu Jindal ◽  
James Grandusky ◽  
Neeraj Tripathi ◽  
Mihir Tungare ◽  
Fatemeh Shahedipour-Sandvik ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Structural Defects ◽  
Lateral Growth ◽  
High Quality ◽  
Metalorganic Chemical

AbstractHigh quality homoepitaxial growth of m-plane GaN films on freestanding m-plane HVPE GaN substrates has been performed using metalorganic chemical vapor deposition. For this a large growth space was studied. Large areas of no-nucleation along with presence of high density of defects were observed when layers were grown under growth conditions for c-plane GaN. It is believed that these structural defects were in large part due to the low lateral growth rates as well as unequal lateral growth rates in a- and c- crystallographic directions. To achieve high quality, fully coalesced epitaxial layers, growth conditions were optimized with respect to growth temperature, V/III ratios and reactor pressure. Higher growth temperatures led to smoother surfaces due to increased surface diffusion of adatoms. Overall, growth at higher temperature and lower V/III ratio decreased the surface roughness and resulted in better optical properties as observed by photoluminescence. Although optimization resulted in highly smooth layers, some macroscopic defects were still observed on the epi-surface as a result of contamination and subsurface damage remaining on bulk substrates possibly due to polishing. Addition of a step involving annealing of the bulk substrate under H2: N2 environment, prior to growth, drastically reduced such macroscopic defects.

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