Preparation and characterization of CuAlxGa1−xSe2alloy layers grown by low‐pressure metalorganic vapor phase epitaxy

1996 ◽  
Vol 80 (6) ◽  
pp. 3338-3345 ◽  
Author(s):  
S. Chichibu ◽  
H. Nakanishi ◽  
S. Shirakata ◽  
S. Isomura ◽  
Y. Harada ◽  
...  
2003 ◽  
Vol 799 ◽  
Author(s):  
T. Ishiguro ◽  
Y. Kobori ◽  
Y. Nagawa ◽  
Y. Iwamura ◽  
S. Yamaguchi

ABSTRACTInSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.


1996 ◽  
Vol 167 (3-4) ◽  
pp. 415-420 ◽  
Author(s):  
M. Behet ◽  
P. Schneider ◽  
D. Moulin ◽  
K. Heime ◽  
J. Woitok ◽  
...  

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  

1988 ◽  
Vol 52 (11) ◽  
pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
H. Jürgensen ◽  
P. Balk ◽  
C. W. T. Bulle Lieuwma

2015 ◽  
Vol 31 ◽  
pp. 100-105 ◽  
Author(s):  
C. Bilel ◽  
H. Fitouri ◽  
I. Zaied ◽  
A. Bchetnia ◽  
A. Rebey ◽  
...  

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