Electrochemical isothermal-capacitance-transient spectroscopy: A new depth profiling method of deep levels

2011 ◽  
Vol 82 (9) ◽  
pp. 093905
Author(s):  
S. Q. Wang ◽  
F. Lu ◽  
D. C. Oh ◽  
J. H. Chang ◽  
T. Hanada ◽  
...  
Keyword(s):  
Depth Profiling ◽  
Deep Levels ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN

2003 ◽  
Vol 764 ◽  
Author(s):  
S. Nakamura ◽  
P. Liu ◽  
M. Suhara ◽  
T. Okumura
Keyword(s):  
Chemical Vapor ◽  
Deep Levels ◽  
Yellow Luminescence ◽  
Capacitance Measurements ◽  
Transient Capacitance ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractThe deep levels in both undoped and Si-doped GaN layer grown by metalorganic chemical vapor deposition have been characterized by photocapacitance and transient capacitance spectroscopy. The increase in the photocapacitance was observed in both GaN samples in the range of 1.8 to 2.2 eV. This is due to the photoionization of carriers from the deep levels associated with the yellow luminescence (YL). In addition, the transient capacitance measurements after the photoionization were also performed in the range of 1.8 to 3.4 eV. The notable transient of capacitance was observed at the photon energies of about 2.1 and 3.4 eV, the former could be associated with the change in the charge state of the YL center and latter might stem from some other defects capturing photogenerated carriers. By using the isothermal capacitance transient spectroscopy (ICTS) analysis, the ICTS peaks due to the deep levels associated with YL were detected at about t = 150 s in both GaN samples. In addition, another ICTS peak was detected only in the Si-doped GaN samples. It is considered that this peak is associated with the deep levels deeper than YL levels and the deeper levels originate from defects induced by Si doping.

Observation of Midgap States in GaN with Optical-Isothermal Capacitance Transient Spectroscopy

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Hacke ◽  
H. Miyoshi ◽  
K. Hiramatsu ◽  
H. Okumura ◽  
S. Yoshida ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Thermal Emission ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Hydride Vapor Phase Epitaxy ◽  
Measured Concentration ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Sequential Appearance ◽  
Isothermal Capacitance Transient Spectroscopy

ABSTRACTOptical-isothermal capacitance transient spectroscopy (O-ICTS) was used to distinguish the deep levels which occur in unintentionally doped n-type GaN by means of their characteristic optical cross section. GaN grown by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) were compared. Correspondence between optical and thermal emission characteristics of previously discovered levels, E2 (∼Ec-0.55 eV) and E4 (∼EC-1.0 eV), were clearly determined by observing their sequential appearance in the ICTS spectra. Whether by thermal or optical stimulation, the emission from E4 was found to be broad in nature; it is consequently believed to involve a defect. The total measured concentration of deep levels, including a prominent level which photoionizes in the range 2.5 to 3.0 eV below the conduction band, is greater in the GaN grown by MOVPE than by HVPE that was tested.

Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy

2002 ◽  
Vol 389-393 ◽  
pp. 851-854
Author(s):  
Makato Fujimaki ◽  
Rudi Ono ◽  
Mitsuhiro Kushibe ◽  
Koh Masahara ◽  
Kazutoshi Kojima ◽  
...  
Keyword(s):  
Deep Levels ◽  
Distribution Profile ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)

2002 ◽  
Vol 389-393 ◽  
pp. 847-850
Author(s):  
Rudi Ono ◽  
Makato Fujimaki ◽  
Junji Senzaki ◽  
Satoshi Tanimoto ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Levels ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy

2000 ◽  
Vol 338-342 ◽  
pp. 757-760
Author(s):  
Setsuko Kobayashi ◽  
Seiji Imai ◽  
Yasuaki Hayami ◽  
Mitsuhiro Kushibe ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Deep Levels ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs

1990 ◽  
Vol 67 (3) ◽  
pp. 1380-1383 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Suk‐Ki Min ◽  
Sung Ho Choh ◽  
Susumu Namba
Keyword(s):  
Leakage Current ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy
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