Paramagnetic defect spin centers in low‐pressure chemical‐vapor‐deposited silicon‐dioxide films

1996 ◽  
Vol 80 (6) ◽  
pp. 3430-3434 ◽  
Author(s):  
Yoshiaki Kamigaki ◽  
Ken’etsu Yokogawa ◽  
Takashi Hashimoto ◽  
Toshio Uemura
Keyword(s):  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Paramagnetic Defect ◽  
Silicon Dioxide Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Improving stress stability in low-pressure chemical vapor deposited silicon dioxide films by ion implantation

2016 ◽  
Vol 598 ◽  
pp. 103-108 ◽  
Author(s):  
Haiping Shang ◽  
Jianyu Fu ◽  
Changqing Xie ◽  
Zhigang Li ◽  
Dapeng Chen
Keyword(s):  
Ion Implantation ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Dioxide Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Highly stable silicon dioxide films deposited by means of rapid thermal low‐pressure chemical vapor deposition onto InP

1991 ◽  
Vol 59 (20) ◽  
pp. 2552-2554 ◽  
Author(s):  
A. Katz ◽  
A. Feingold ◽  
U. K. Chakrabarti ◽  
S. J. Pearton ◽  
K. S. Jones
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Dioxide Films ◽  
Pressure Chemical
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