Carrier dynamics in oxidized porous silicon

1996 ◽  
Vol 80 (3) ◽  
pp. 1749-1756 ◽  
Author(s):  
Shuji Komuro ◽  
Takashi Kato ◽  
Takitaro Morikawa ◽  
Patrick O’Keeffe ◽  
Yoshinobu Aoyagi
Keyword(s):  
Porous Silicon ◽  
Carrier Dynamics ◽  
Oxidized Porous Silicon

Carrier Dynamics in Porous Silicon: from the Femtosecond to the Second

1994 ◽  
Vol 358 ◽  
Author(s):  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Time Domain ◽  
Room Temperature ◽  
Auger Recombination ◽  
Excitation Intensity ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Oxidized Porous Silicon ◽  
Red Luminescence ◽  
Absorption Measurements

ABSTRACTThe luminescence in red-emitting porous silicon exhibits a distribution of lifetimes in the μsec time domain at room temperature and in the msec time domain at cryogenic temperatures. However, the luminescence and carrier dynamics in porous silicon display transients that vary from much less than 1 psec to ∼ 1 sec, depending on the measurement conditions and sample preparation. We have investigated the carrier dynamics in porous silicon by two time-resolved techniques. The blue photoluminescence of oxidized porous silicon has been measured with 100 ps time resolution as a function of the oxidation method, emission wavelength, excitation intensity and measurement temperature. The blue luminescence has a distinct origin from the well-studied red luminescence and we attribute it to defects in the oxide. Femtosecond photoinduced absorption measurements have been performed on thin red-emitting porous silicon films. The wavelength and intensity dependence of the recovery are interpreted in terms of trapping and of Auger recombination at high excitation intensity. Our results also show conclusively that red-emitting porous silicon is not a direct gap semiconductor.

scholarly journals Anisotropic polarization memory in thermally oxidized porous silicon

2000 ◽  
Vol 77 (15) ◽  
pp. 2316-2318 ◽  
Author(s):  
Hideki Koyama ◽  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Oxidized Porous Silicon

Optical gain in dye-doped polymer waveguides using oxidized porous silicon cladding

2007 ◽  
Author(s):  
Daniel Navarro-Urrios ◽  
Mher Ghulinyan ◽  
Paolo Bettotti ◽  
Néstor Capuj ◽  
Claudio J. Oton ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Optical Gain ◽  
Polymer Waveguides ◽  
Oxidized Porous Silicon ◽  
Doped Polymer

Observation of quantum-confined luminescence in partially oxidized porous silicon

2000 ◽  
Vol 80 (4) ◽  
pp. 679-689 ◽  
Author(s):  
Giampiero Amato ◽  
L. Boarino ◽  
D. Midellino ◽  
A. M. Rossi
Keyword(s):  
Porous Silicon ◽  
Oxidized Porous Silicon ◽  
Quantum Confined

Strongly Superlinear Light Emission and Large Induced Absorption in Oxidized Porous Silicon Films

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Koyama ◽  
P. M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Thermal Effects ◽  
Light Emission ◽  
Laser Intensity ◽  
Excitation Intensity ◽  
Silicon Films ◽  
Free Standing ◽  
Induced Absorption ◽  
Cw Laser ◽  
Oxidized Porous Silicon

AbstractThe optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm2. This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by ≤99.7 %.The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.

Using an oxidized porous silicon interferometer for determination of relative protein binding affinity through non-covalent capture probe immobilization

2007 ◽  
Vol 204 (5) ◽  
pp. 1444-1448 ◽  
Author(s):  
Michael P. Schwartz ◽  
Christine Yu ◽  
Sara D. Alvarez ◽  
Benjamin Migliori ◽  
Denis Godin ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Protein Binding ◽  
Binding Affinity ◽  
Capture Probe ◽  
Oxidized Porous Silicon

Visible Photoluminescence from Anodically Oxidized Porous Silicon

1994 ◽  
Vol 33 (Part 2, No. 7A) ◽  
pp. L941-L944 ◽  
Author(s):  
Toshimichi Ito ◽  
Kenji Motoi ◽  
Osamu Arakaki ◽  
Akimitsu Hatta ◽  
Akio Hiraki
Keyword(s):  
Porous Silicon ◽  
Visible Photoluminescence ◽  
Oxidized Porous Silicon
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