Photon Strength Functions at the low-energy tail of the GEDR Obtained from Different Reactions

2011 ◽  
Author(s):  
M. Krtička ◽  
F. Bečvář ◽  
Paraskevi Demetriou ◽  
Rauno Julin ◽  
Sotirios Harissopulos
2010 ◽  
Vol 2 ◽  
pp. 03002 ◽  
Author(s):  
M. Krtička ◽  
F. Bečvář

2017 ◽  
Vol 44 (6) ◽  
pp. 064005 ◽  
Author(s):  
A C Larsen ◽  
M Guttormsen ◽  
N Blasi ◽  
A Bracco ◽  
F Camera ◽  
...  

1975 ◽  
Vol 32 (1) ◽  
pp. K37-K39 ◽  
Author(s):  
J. Berrehar ◽  
M. Schott ◽  
P. Delannoy

2019 ◽  
Vol 199 (3-4) ◽  
pp. 1046-1054 ◽  
Author(s):  
G. C. O’Neil ◽  
P. Szypryt ◽  
E. Takacs ◽  
J. N. Tan ◽  
S. W. Buechele ◽  
...  

2008 ◽  
Vol 77 (6) ◽  
Author(s):  
G. Rusev ◽  
R. Schwengner ◽  
F. Dönau ◽  
M. Erhard ◽  
E. Grosse ◽  
...  

1983 ◽  
Vol 217 (3) ◽  
pp. 515-519 ◽  
Author(s):  
Kunihiro Shima ◽  
Seiichiro Nagai ◽  
Takashi Mikumo ◽  
Shinjiro Yasumi
Keyword(s):  
X Ray ◽  

1987 ◽  
Vol 95 ◽  
Author(s):  
R. Ranganathan ◽  
M. Gal ◽  
J. M. Viner ◽  
P. C. Taylor

AbstractResults of a detailed study of photoluminescence (PL) in the a-Si1−xGex:H system are presented. Many samples exhibit a low energy “tail” to the PL efficiency which is of constant magnitude independent of x. There is a departure from this behavior when a low energy PL peak near 0.8–0.9 eV is present. The position of the low energy PL peak is independent of Ge concentration. It has been suggested that this PL transition is from an electron in the conduction band tail into a silicon dangling bond state. As Ge is added to a-Si:H it is the edge of the conduction band which decreases in energy while the valence band remains relatively constant in energy. It is therefore unlikely that the low energy PL is due to a transition from the conduction band into a silicon dangling bond state because the energy of the silicon dangling bond with respect to the valence band is probably essentially independent of Ge content. If the PL which peaks near 0.8 eV results from a transition which involves a silicon dangling bond, then the transition may be from the dangling bond to the valence band.


2017 ◽  
Vol 146 ◽  
pp. 05001
Author(s):  
Ronald Schwengner ◽  
Ralph Massarczyk ◽  
Daniel Bemmerer ◽  
Roland Beyer ◽  
Arnd R. Junghans ◽  
...  

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