Vaporization of aluminum by 50 ps KrF laser pulses

1996 ◽  
Vol 80 (1) ◽  
pp. 509-512 ◽  
Author(s):  
Y. Y. Tsui ◽  
R. Fedosejevs ◽  
C. E. Capjack
Keyword(s):  
2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.


1995 ◽  
Vol 10 (8) ◽  
pp. 1884-1888 ◽  
Author(s):  
S. Krishnan ◽  
M.I. Chaudhry ◽  
S.V. Babu

Amorphous silicon germanium (a-SiGe) films, deposited on silicon substrates at room temperature in a molecular beam epitaxy system, were transformed into a single-crystal film and doped with phosphorus by exposure to KrF laser pulses. Electron channeling patterns showed that laser exposure resulted in crystallization of the undoped a-SiGe films. The SiGe films were doped by laser irradiation, using a phosphorus spin-on-dopant. The sheet resistance of the doped films decreased with increasing numbers of pulses, reaching a value of about ∼ 5 × 104 ohms/□ after 15 pulses. I-V data from mesa-type n-SiGe/p-Si diode devices were used to determine the effect of laser processing on the quality of the SiGe films.


2020 ◽  
Vol 8 ◽  
Author(s):  
Zsolt Kovács ◽  
Barnabás Gilicze ◽  
Sándor Szatmári ◽  
István B. Földes

1994 ◽  
Vol 76 (9) ◽  
pp. 5047-5053 ◽  
Author(s):  
R. Bobkowski ◽  
J. N. Broughton ◽  
R. Fedosejevs ◽  
R. J. Willis ◽  
M. R. Cervenan

1988 ◽  
Author(s):  
T D. Raymond ◽  
C Reiser ◽  
R G. Adams ◽  
R B. Michie ◽  
C Woods
Keyword(s):  

1999 ◽  
Vol 59 (4) ◽  
pp. 3141-3141
Author(s):  
B. Witzel ◽  
C. J. G. J. Uiterwaal ◽  
H. Schröder ◽  
D. Charalambidis ◽  
K.-L. Kompa

1996 ◽  
Vol 54 (2) ◽  
pp. 2166-2169 ◽  
Author(s):  
Y. M. Li ◽  
R. Fedosejevs

1992 ◽  
Vol 93 (5-6) ◽  
pp. 366-377 ◽  
Author(s):  
Y.M. Li ◽  
J.N. Broughton ◽  
R. Fedosejevs ◽  
T. Tomie

1994 ◽  
Vol 111 (3-4) ◽  
pp. 360-369 ◽  
Author(s):  
Y.Y. Tsui ◽  
J. Santiago ◽  
Y.M. Li ◽  
R. Fedosejevs

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