Near-infrared photodetector with CuIn1−x AlxSe2 thin film

2011 ◽  
Vol 99 (8) ◽  
pp. 081103 ◽  
Author(s):  
Ruo-Ping Chang ◽  
Dung-Ching Perng
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Infrared Photodetector

scholarly journals CuInSe2-Based Near-Infrared Photodetector

2021 ◽  
Vol 12 (1) ◽  
pp. 92
Author(s):  
Sung-Tae Kim ◽  
Ji-Seon Yoo ◽  
Min-Woo Lee ◽  
Ji-Won Jung ◽  
Jae-Hyung Jang
Keyword(s):  
Thin Film ◽  
Linear Response ◽  
Biomedical Applications ◽  
Near Infrared ◽  
Laser Light ◽  
Optical Fiber Communications ◽  
Infrared Photodetector ◽  
Fiber Communications ◽  
Optical Wavelengths ◽  
Cuinse2 Thin Film

Near-infrared (NIR) photodetectors have interesting roles in optical fiber communications and biomedical applications. Conventional NIR photodetectors have been realized using InGaAs and Ge, of which the cut-off wavelengths exceed 1500 nm. Si-based photodetectors exhibit limited external quantum efficiency at wavelengths longer than 1000 nm. By synthesizing a CuInSe2 compound on a glass substrate, photodetectors that can detect optical wavelengths longer than 1100 nm have been realized in this study. The bandgap energies of the CuInSe2 thin films were tuned by varying the Cu/In ratio from 1.02 to 0.87. The longest cut-off wavelength (1309 nm) was obtained from a CuInSe2 thin film having a Cu/In ratio of 0.87. The responsivity of the photodiode was measured under the illumination of a 1064 nm laser light. The photo responses exhibited linear response up to 2.33 mW optical illumination and a responsivity of 0.60 A/W at −0.4 V.

High performance near infrared photodetector based on cubic crystal structure SnS thin film on a glass substrate

2017 ◽  
Vol 200 ◽  
pp. 10-13 ◽  
Author(s):  
Mohamed S. Mahdi ◽  
K. Ibrahim ◽  
A. Hmood ◽  
Naser M. Ahmed ◽  
Falah I. Mustafa ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Glass Substrate ◽  
High Performance ◽  
Near Infrared ◽  
Infrared Photodetector ◽  
Cubic Crystal

scholarly journals Plasmon-Enhanced Sunlight Harvesting in Thin-Film Solar Cell by Randomly Distributed Nanoparticle Array

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1380
Author(s):  
Marwa M. Tharwat ◽  
Ashwag Almalki ◽  
Amr M. Mahros
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Near Infrared ◽  
Structural Parameters ◽  
Visible Region ◽  
Nanoparticle Array ◽  
Solar Energy Harvesting ◽  
Infra Red ◽  
Crucial Parameter

In this paper, a randomly distributed plasmonic aluminum nanoparticle array is introduced on the top surface of conventional GaAs thin-film solar cells to improve sunlight harvesting. The performance of such photovoltaic structures is determined through monitoring the modification of its absorbance due to changing its structural parameters. A single Al nanoparticle array is integrated over the antireflective layer to boost the absorption spectra in both visible and near-infra-red regimes. Furthermore, the planar density of the plasmonic layer is presented as a crucial parameter in studying and investigating the performance of the solar cells. Then, we have introduced a double Al nanoparticle array as an imperfection from the regular uniform single array as it has different size particles and various spatial distributions. The comparison of performances was established using the enhancement percentage in the absorption. The findings illustrate that the structural parameters of the reported solar cell, especially the planar density of the plasmonic layer, have significant impacts on tuning solar energy harvesting. Additionally, increasing the plasmonic planar density enhances the absorption in the visible region. On the other hand, the absorption in the near-infrared regime becomes worse, and vice versa.

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Transmission Electron ◽  
Doped Zno ◽  
Er Doped

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.

High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 nm to 2500 nm near-infrared illumination

2022 ◽  
Author(s):  
Ali Sehpar Shikoh ◽  
Gi Sang Choi ◽  
Sungmin Hong ◽  
Kwang Seob Jeong ◽  
Jaekyun Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Near Infrared ◽  
Effective Diffusion ◽  
Band Alignment ◽  
Oxide Thin Film ◽  
Photogenerated Carrier ◽  
Channel Layer ◽  
Metal Oxide Thin Film

Abstract We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107 Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

Passively Q-switched operation based on Sb2Se3 and self-power near infrared photodetector

2021 ◽  
pp. 118704
Author(s):  
Lijun Yu ◽  
Benhai Wang ◽  
Haobin Han ◽  
Chaoqing Dai ◽  
Wei Liu ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Photodetector

Characteristics of Near-infrared Induced Transmission Enhancement of Thin Film Micro-structures

2019 ◽  
Vol 48 (7) ◽  
pp. 731001
Author(s):  
葛少博 GE Shao-bo ◽  
刘卫国 LIU Wei-guo ◽  
周顺 ZHOU Shun ◽  
杨鹏飞 YANG Peng-fei ◽  
李世杰 LI Shi-jie ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Transmission Enhancement ◽  
Micro Structures
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