scholarly journals Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition

2011 ◽  
Vol 99 (7) ◽  
pp. 071111 ◽  
Author(s):  
E. H. Steenbergen ◽  
Y. Huang ◽  
J.-H. Ryou ◽  
L. Ouyang ◽  
J.-J. Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Type Ii ◽  
Metalorganic Chemical

Preparation and Characterization of RuOxThin Films by Liquid Delivery Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 43 (5A) ◽  
pp. 2667-2671 ◽  
Author(s):  
Kyoung-Won Kim ◽  
Nam-Soo Kim ◽  
Hyung-Gyoo Lee ◽  
Yeong-Seuk Kim ◽  
Hee-Jae Kang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical ◽  
Liquid Delivery

Fabrication/Characterization of a Pseudomorphic Ga0.1In0.9P/InP MESFET

1993 ◽  
Vol 300 ◽  
Author(s):  
M. S. Feng ◽  
Y. M. Hsin ◽  
C. H. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Drain Current ◽  
Low Pressure ◽  
Inp Substrate ◽  
Metalorganic Chemical

ABSTRACTA pseudomorphic Ga0.1In0.9P/InP MESFET grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) has been fabricated and characterized. The results indicated a transconductance of 66.7 ms/mm and a saturation drain current (Idss) of 55.6 mA have been achieved; furthermore, the Schottky barrier on InGaP as high as 0.67eV can be obtained using Pt2Si as the gate material. For comparison, a conventional InP MESFET with 5μm gate length has also been fabricated on InP epitaxial layer grown by low pressure metalorganic chemical vapor deposition on Fe-doped semi-insulating InP substrate. The transconductance and Idss were found to be 46.7 mS/mm and 43.1 mA at zero gate, respectively, for the depletion mode n-channel MESFET with Au as the gate metal; whereas, for the MESFET using Pt2Si as the gate metal, a transconductance of 40.3 mS/mm and a saturation drain current of 41.1 mA at zero gate bias have been obtained. The results indicated that Ga0.1In0.9P/lnP MESFET has better performance than InP MESFET because of higher energy gap of Ga0.1In0.9P.

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