Amorphous and microcrystalline silicon films deposited by hot‐wire chemical vapor deposition at filament temperatures between 1500 and 1900 °C

1996 ◽  
Vol 79 (11) ◽  
pp. 8748-8760 ◽  
Author(s):  
P. Brogueira ◽  
J. P. Conde ◽  
S. Arekat ◽  
V. Chu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Microcrystalline Silicon

scholarly journals A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

10.30544/128 ◽  
2015 ◽  
Vol 21 (1) ◽  
pp. 7-14
Author(s):  
Meysam Zarchi ◽  
Shahrokh Ahangarani
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Intrinsic Stress ◽  
Hot Wire ◽  
Microcrystalline Silicon

The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) and hot-wire chemical vapor deposition (HW-CVD) at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50%) can be deposited by HW-CVD all the way down to room temperature.

Microcrystalline silicon films fabricated by bias-assisted hot-wire chemical vapor deposition

2013 ◽  
Vol 24 (11) ◽  
pp. 4574-4577
Author(s):  
Lei Zhang ◽  
Honglie Shen ◽  
Jiayi You ◽  
Xuefan Jiang ◽  
Bin Qian ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Microcrystalline Silicon

Surface roughness scaling of microcrystalline silicon films by hot-wire chemical vapor deposition

2005 ◽  
Vol 285 (4) ◽  
pp. 491-498 ◽  
Author(s):  
Jinhua Gu ◽  
Yuqin Zhou ◽  
Meifang Zhu ◽  
Fengzhen Liu ◽  
Jinlong Liu
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Microcrystalline Silicon
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