Control of Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxy

Kenji Kurishima; Takashi Kobayashi; Hiroshi Ito; Ulrich Gösele

doi:10.1063/1.361830

Control of Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.361830 ◽

1996 ◽

Vol 79 (8) ◽

pp. 4017 ◽

Cited By ~ 22

Author(s):

Kenji Kurishima ◽

Takashi Kobayashi ◽

Hiroshi Ito ◽

Ulrich Gösele

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Zn Diffusion

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Surface morphology of metalorganic vapor phase epitaxy grown GaAs, GaInP for heterojunction bipolar transistor applications with nitrogen as the carrier gas

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791682 ◽

2002 ◽

Author(s):

C.C. Hsu ◽

J.B. Xu

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Carrier Gas

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Performance comparison of metalorganic vapor phase epitaxy grown C-doped GaAs/AlGaAs heterojunction bipolar transistor wafers between AsH3 and trimethylarsenic for the base layer growth

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91169-x ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 947-952 ◽

Cited By ~ 3

Author(s):

S. Tanaka ◽

S. Kato ◽

S. Hattori ◽

S. Kojima ◽

M. Ikeda ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Performance Comparison ◽

Layer Growth ◽

Vapor Phase Epitaxy ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Base Layer

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Zn diffusion in Ruthenium doped InP with annealing by Metalorganic Vapor Phase Epitaxy

2013 International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.2013.6562581 ◽

2013 ◽

Cited By ~ 1

Author(s):

H. Yamaguchi ◽

T. Nagira ◽

Z. Kawazu ◽

K. Ono ◽

M. Takemi

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Zn Diffusion

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Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.340143 ◽

1988 ◽

Vol 63 (9) ◽

pp. 4485-4493 ◽

Cited By ~ 95

Author(s):

P. Enquist ◽

J. A. Hutchby ◽

T. J. de Lyon

Keyword(s):

Gallium Arsenide ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Organometallic Vapor Phase Epitaxy ◽

And Diffusion

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Concentration dependent Zn diffusion in InP during metalorganic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.360049 ◽

1995 ◽

Vol 78 (5) ◽

pp. 3001-3007 ◽

Cited By ~ 25

Author(s):

S. N. G Chu ◽

R. A. Logan ◽

M. Geva ◽

N. T. Ha

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Zn Diffusion

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Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

Applied Surface Science ◽

10.1016/j.apsusc.2020.148773 ◽

2021 ◽

Vol 544 ◽

pp. 148773

Author(s):

Peng Lin ◽

Nannan Niu ◽

Ran Zuo ◽

Yulong Fang ◽

Zhihong Feng

Keyword(s):

Density Functional Theory ◽

Vapor Phase ◽

Density Functional ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Density Functional Theory Study ◽

Functional Theory

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Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

Cubic Gan

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Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90469-l ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 268-273 ◽

Cited By ~ 17

Author(s):

M.A. Tischler ◽

R.M. Potemski ◽

T.F. Kuech ◽

F. Cardone ◽

M.S. Goorsky ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Acceptor Doping

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Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90130-9 ◽

1994 ◽

Vol 135 (3-4) ◽

pp. 423-433 ◽

Cited By ~ 13

Author(s):

J.M. Redwing ◽

T.F. Kuech ◽

D. Saulys ◽

D.F. Gaines

Keyword(s):

Gas Phase ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Silicon Doping ◽

Group V ◽

Gas Phase Chemistry ◽

Phase Chemistry

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Compensation of shallow impurities in oxygen‐doped metalorganic vapor phase epitaxy grown GaAs

Journal of Applied Physics ◽

10.1063/1.363811 ◽

1996 ◽

Vol 80 (12) ◽

pp. 6819-6826 ◽

Cited By ~ 9

Author(s):

J. W. Huang ◽

K. L. Bray ◽

T. F. Kuech

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Shallow Impurities

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