scholarly journals Publisher’s Note: “Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field” [J. Appl. Phys. 109, 073108 (2011)]

2011 ◽  
Vol 110 (2) ◽  
pp. 029903
Author(s):  
V. A. Shalygin ◽  
L. E. Vorobjev ◽  
D. A. Firsov ◽  
A. N. Sofronov ◽  
G. A. Melentyev ◽  
...  
Keyword(s):  
Electric Field ◽  
Terahertz Radiation ◽  
Electron Heating ◽  
Lateral Electric Field ◽  
Gan Heterostructure

Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field

2011 ◽  
Vol 109 (7) ◽  
pp. 073108 ◽  
Author(s):  
V. A. Shalygin ◽  
L. E. Vorobjev ◽  
D. A. Firsov ◽  
A. N. Sofronov ◽  
G. A. Melentyev ◽  
...  
Keyword(s):  
Electric Field ◽  
Terahertz Radiation ◽  
Electron Heating ◽  
Lateral Electric Field ◽  
Gan Heterostructure

Emission of terahertz radiation from GaN/AlGaN heterostructure under electron heating in lateral electric field

2013 ◽  
Author(s):  
V. A. Shalygin ◽  
L. E. Vorobjev ◽  
D. A. Firsov ◽  
A. N. Sofronov ◽  
G. A. Melentyev ◽  
...  
Keyword(s):  
Electric Field ◽  
Terahertz Radiation ◽  
Electron Heating ◽  
Lateral Electric Field

Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field

2010 ◽  
Vol 3 (9) ◽  
pp. 092201 ◽  
Author(s):  
Grace D. Metcalfe ◽  
Hongen Shen ◽  
Michael Wraback ◽  
Gregor Koblmüller ◽  
Chad Gallinat ◽  
...  
Keyword(s):  
Electric Field ◽  
Terahertz Radiation

scholarly journals Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

2015 ◽  
Vol 74 ◽  
pp. 421-425 ◽  
Author(s):  
M.G. Barseghyan ◽  
H.M. Baghramyan ◽  
D. Laroze ◽  
J. Bragard ◽  
A.A. Kirakosyan
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Ring Structure ◽  
Lateral Electric Field ◽  
Intraband Absorption

Determination of a Microbial Cells in Their Interaction with Phage Mini-Antibodies by the Sensor Based on a PZT Resonator with a Lateral Electric Field

2021 ◽  
Vol 85 (6) ◽  
pp. 599-602
Author(s):  
I. A. Borodina ◽  
B. D. Zaitsev ◽  
A. A. Teplykh ◽  
A. K. M. Alsowaidi ◽  
O. S. Larionova ◽  
...  
Keyword(s):  
Electric Field ◽  
Microbial Cells ◽  
Lateral Electric Field

Array of piezoelectric lateral electric field excited resonators

Ultrasonics ◽  
2015 ◽  
Vol 62 ◽  
pp. 200-202 ◽  
Author(s):  
I.A. Borodina ◽  
B.D. Zaitsev ◽  
A.A. Teplykh ◽  
A.M. Shikhabudinov ◽  
I.E. Kuznetsova
Keyword(s):  
Electric Field ◽  
Lateral Electric Field

A Time-of-Flight CMOS Range Image Sensor Using 4-Tap Output Pixels with Lateral-Electric-Field Control

2016 ◽  
Vol 2016 (12) ◽  
pp. 1-6 ◽  
Author(s):  
Taichi KASUGAI ◽  
Sang-Man HAN ◽  
Hanh TRANG ◽  
Taishi TAKASAWA ◽  
Satoshi AOYAMA ◽  
...  
Keyword(s):  
Electric Field ◽  
Time Of Flight ◽  
Image Sensor ◽  
Range Image ◽  
Lateral Electric Field ◽  
Field Control

scholarly journals Терагерцовые дисперсия и усиление при стриминге электронов в графене при 300 K

2020 ◽  
Vol 54 (9) ◽  
pp. 888
Author(s):  
А.А. Андронов ◽  
В.И. Позднякова
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Terahertz Radiation ◽  
High Resistance ◽  
Applied Voltage ◽  
Momentum Space ◽  
Hexagonal Boron Nitride ◽  
Strong Electric Field ◽  
Microwave Generator ◽  
Time Frequency

Abstract We interpret the recent observations of Otsuji’s team (Sendai) on switching from absorption to amplification at a temperature of T = 300 K during the passage of terahertz radiation through hexagonal boron nitride–graphene sandwiches with multiple gates on the surface with an increase in the electric field in graphene. It is shown that these effects are related to dispersion and negative conductivity near the transit-time frequency of electrons in momentum space under streaming (anisotropic distribution) in graphene in a strong electric field. On the basis of these data, a universal tunable terahertz source is proposed, which has the form of a graphene-containing sandwich with a high-resistance silicon wafer (a cavity) with an applied voltage. This terahertz cavity is a complete analog of the microwave generator implemented on an InP chip by Vorobev’s team (St. Petersburg).

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