Simultaneous measurement of thermal diffusivity and optical absorption coefficient using photothermal radiometry. I. Homogeneous solids

2011 ◽  
Vol 110 (3) ◽  
pp. 033515 ◽  
Author(s):  
Raquel Fuente ◽  
Estibaliz Apiñaniz ◽  
Arantza Mendioroz ◽  
Agustín Salazar
Keyword(s):  
Thermal Diffusivity ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Simultaneous Measurement ◽  
Photothermal Radiometry ◽  
Optical Absorption Coefficient

scholarly journals The effect of ageing on YBa2Cu3O7-x obtained by the photoacoustic method

2003 ◽  
Vol 35 (1) ◽  
pp. 23-29 ◽  
Author(s):  
Pantelija Nikolic ◽  
D. Radovic-Vasiljevic ◽  
K. Radulovic ◽  
D. Lukovic ◽  
S.S. Vujatovic ◽  
...  
Keyword(s):  
Thermal Diffusivity ◽  
Theoretical Model ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Transport Properties ◽  
Carrier Lifetime ◽  
Modulation Frequency ◽  
Optical Absorption Coefficient ◽  
Electric Transport ◽  
Transmission Technique

Thermal diffusivity and electric transport properties of fourteen years old superconducting YBa2Cu3O7-x pellets were obtained using the photoacoustic transmission technique and then compared with freshly made superconducting samples. The theoretical model for photoacoustic (PA) detection configuration is given. The measured amplitude and phase PA signals, as a function of the modulation frequency, were numerically analyzed. The thermal diffusivity, the coefficient of the carrier diffusion, optical absorption coefficient and the excess carrier lifetime were calculated. The thermal diffusivity of freshly produced samples decreased, after ageing, from about 1.3?10-6 to about 6.1?10-7 m2/s.

scholarly journals Optical Absorption Coefficient of a Dispersion of Clusters Composed of a Large Number of Spheres

1987 ◽  
Vol 6 (2) ◽  
pp. 173-181 ◽  
Author(s):  
F. Borghese ◽  
P. Denti ◽  
R. Saija ◽  
G. Toscano ◽  
O. I. Sindoni
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Optical Absorption Coefficient

Quantitative photopyroelectric out-of-phase spectroscopy of amorphous silicon thin films deposited on crystalline silicon

1991 ◽  
Vol 69 (3-4) ◽  
pp. 317-323 ◽  
Author(s):  
Constantinos Christofides ◽  
Andreas Mandelis ◽  
Albert Engel ◽  
Michel Bisson ◽  
Gord Harling
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Dynamic Range ◽  
Crystalline Silicon ◽  
Optical Absorption Coefficient ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Background Compensation

A photopyroelectric spectrometer with real-time and(or) self-normalization capability was used for both conventional transmission and thermal-wave spectroscopic measurements of amorphous Si thin films, deposited on crystalline Si substrates. Optical-absorption-coefficient spectra were obtained from these measurements and the superior dynamic range of the out-of-phase (quadrature) photopyroelectric signal was established as the preferred measurement method, owing to its zero-background compensation capability. An extension of a photopyroelectric theoretical model was established and successfully tested in the determination of the optical absorption coefficient and the thermal diffusivity of the sample under investigation. Instrumental sensitivity limits of βt ≈ 5 × 10−3 were demonstrated.

Reversible Changes in the Electronic and Optical Properties of Micro-Crystalline ln2O 3-x: A Comparison with Amorphous In2O3-x

1996 ◽  
Vol 426 ◽  
Author(s):  
B. Pashmakov ◽  
H. Fritzsche ◽  
B. Claflin
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Ultraviolet Light ◽  
Indium Oxide ◽  
Electrical Conductance ◽  
Inert Gas ◽  
Optical Absorption Coefficient ◽  
Electronic And Optical Properties

AbstractThe electrical conductance and optical absorption coefficient of microcrystalline indium oxide (c – In2 O 3-x ) can be changed reversibly by several orders of magnitude by photoreduction and reoxidation. Photoreduction is achieved by exposure to ultraviolet light hv ≥ 3.5eV in vacuum or an inert gas. The effects are similar to those previously observed in amorphous In2 O3-x

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