Surface roughness in Cu(100)/[Co/Cu]n systems grown by ion-beam sputtering

1996 ◽  
Vol 79 (8) ◽  
pp. 5116 ◽  
Author(s):  
Timothy J. Minvielle ◽  
Robert L. White ◽  
Robert J. Wilson
Keyword(s):  
Surface Roughness ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Evolution mechanism of surface roughness during ion beam sputtering of fused silica

2018 ◽  
Vol 57 (20) ◽  
pp. 5566 ◽  
Author(s):  
Mingjin Xu ◽  
Yifan Dai ◽  
Lin Zhou ◽  
Xiaoqiang Peng ◽  
Shaoshan Chen ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Beam ◽  
Fused Silica ◽  
Ion Beam Sputtering ◽  
Evolution Mechanism ◽  
Beam Sputtering

Double Layer Processes of LBMO/YBCO and Crystalline Degradations

2005 ◽  
Vol 887 ◽  
Author(s):  
Hong Zhu ◽  
Masanori Okada ◽  
Hidetaka Nakashima ◽  
Ajay K. Sarkar ◽  
Hirofumi Yamasaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Double Layer ◽  
Ion Beam ◽  
Double Layers ◽  
Layer Surface ◽  
Ion Beam Sputtering ◽  
Minimum Surface ◽  
Layer Deposition ◽  
Beam Sputtering

ABSTRACTDouble Layer Processes of LBMO/YBCO and Crystalline Degradations Oxide microwave devices will be widely expected in mobile communication system in the near future in the world. Superconducting YBa2Cu3Ox (YBCO) thin films are most advisable for microwave filter devices due to their very low surface resistance. Next generation devices are tunable microwave filters formed by double layers consisting of YBCO and ferromagnetic manganites such as La(Ba)MnO3 (LBMO).In order to complete excellent double layers, we must first obtain proper techniques to fabricate perfect a/c-phases of YBCO and excellent crystalline LBMO single layers on substrate at low substrate temperatures (Ts), and then fabricate their double layers. We have tried an ion beam sputtering (IBS), then now we can control the perfect a-c orientation growths of YBCO. The minimum surface roughness is 1 nm for the c-phase and 0.3 nm for the a-phase.Excellent crystalline thin films of LBMO can be grown by IBS with controlling Ts, oxygen pressure (Po) and oxygen molecular or plasma supply on MgO and LAO substrates. It can be grown down to 480 deg C. The minimum rocking half-width is 0.01 deg, and the minimum surface roughness is 0.8 nm. As-grown LBMO film shows different metal-insulator transition and Curier temperatures. The results are interpreted by a phase separation and magnetostriction.The double layers of YBCO on LBMO and LBMO on YBCO were fabricated by IBS. In YBCO/LBMO, the excellent a/c-YBCO can be grown on the underlying LBMO at 600-650 °C. The crystallinity of overlying YBCO is nearly the same with that of the single layers on MgO and LAO. The mosaicity of YBCO is much better than that of the single layers on MgO and LAO. It is noticed that the underlying LBMO crystallinity can be improved, and the mosaicity is not degraded after the double layer deposition. A n inferiority is that the double layer surface is much degraded. Then we should fabricate the smooth underlying LBMO. In LBMO/YBCO, the excellent crystalline LBMO can be grown on the underlying a/c-YBCO at 650-700 deg C. The better crystalline LBMO grows on the better crystalline YBCO. The LBMO/a-YBCO clearly shows XRD peak separations while the LBMO/c-YBCO shows peak overlappings. The crystallinity of overlying LBMO is slightly poorer that that of the single layers on LAO. The mosaicity of LBMO is much poorer than that of the single layers of LBMO on LAO, but is almost the same with that of the underlying YBCO. It should be noticed that the crystallinity of underlying YBCO is degraded considerably after the double layer deposition. Then we should deposite the overlying LBMO at low temperatures. However a superiority is that the double layer surface is not degraded or rather improved. Now we are estimating time-dependence of the crystalline degradations on the single and double layers. YBCO crystallinity is easily degraded with time but LBMO is very stable. Then LBMO/YBCO is advisable in terms of a long term degradation.

The Effects of Ion Energy on Carbon and Tungsten Films Fabricated by Direct Ion Beam Deposition and Ion Beam Sputtering Deposition

1991 ◽  
Vol 223 ◽  
Author(s):  
I. Kataoka ◽  
K. Ito ◽  
N. Hoshi ◽  
T. Yonemitsu ◽  
K. Etoh ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Beam ◽  
Amorphous Structure ◽  
Film Structure ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Sputtering Deposition ◽  
Ion Beam Deposition ◽  
Beam Sputtering ◽  
Beam Deposition

ABSTRACTThe x-ray reflectivity and surface morphology of C/W multilayers fabricated by ion beam sputtering (IBS) method was evaluated. Also the surface roughness and amorphous structure of C and W films fabricated by direct ion beam deposition (DIBD) method were evaluated as a function of ion energy. The reflectivity was measured by the C-K line (4.47nm) and STM was used for surface roughness measurement and root-mean-square value of correlation function of the RHEED pattern was used for evaluation of amorphous structure. The reflectivity of C/W multilayer was about 69% of the theoretical one, and micro-columnar structures were observed from STM images. The film structure and surface roughness of DIBD film were changed with the depositing ion energy. The surface roughness of films becomes smaller as the depositing energy becomes higher in the energy range from 20 to 140eV.

Effect of substrate temperature on surface roughness and optical properties of Ta2O5 using ion-beam sputtering

2005 ◽  
Vol 475 (1-2) ◽  
pp. 239-242 ◽  
Author(s):  
S.G. Yoon ◽  
H.K. Kim ◽  
M.J. Kim ◽  
H.M. Lee ◽  
D.H. Yoon
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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