Origin of the charge carriers accumulation/depletion in porous silicon contacted by a liquid phase

1996 ◽  
Vol 79 (5) ◽  
pp. 2513-2516 ◽  
Author(s):  
A. Bsiesy ◽  
B. Gelloz ◽  
F. Gaspard ◽  
F. Muller
Keyword(s):  
Liquid Phase ◽  
Porous Silicon ◽  
Charge Carriers

Electrical porous silicon sensor for detection of various organic molecules in liquid phase

2015 ◽  
Vol 212 (8) ◽  
pp. 1851-1857 ◽  
Author(s):  
Farid A. Harraz ◽  
Adel A. Ismail ◽  
Houcine Bouzid ◽  
Saleh A. Al-Sayari ◽  
Ali Al-Hajry ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Porous Silicon ◽  
Organic Molecules ◽  
Silicon Sensor

ANISOTROPY OF ABSORPTION BY FREE CHARGE CARRIERS AND SURFACE BOND VIBRATIONS IN POROUS SILICON

2007 ◽  
Author(s):  
A. I. EFIMOVA ◽  
E. YU. KRUTKOVA ◽  
L. A. GOLOVAN ◽  
V. YU. TIMOSHENKO ◽  
P. K. KASHKAROV
Keyword(s):  
Porous Silicon ◽  
Charge Carriers ◽  
Free Charge ◽  
Surface Bond

Mobility of charge carriers in porous silicon layers

2008 ◽  
Vol 107 (6) ◽  
pp. 1022-1026 ◽  
Author(s):  
P. A. Forsh ◽  
M. N. Martyshov ◽  
A. P. Latysheva ◽  
A. S. Vorontsov ◽  
V. Yu. Timoshenko ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Charge Carriers ◽  
Mobility Of Charge Carriers

Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation

2004 ◽  
Vol 97-98 ◽  
pp. 181-184 ◽  
Author(s):  
M.E. Kompan ◽  
A.E. Gorodetski ◽  
I.L. Tarasova
Keyword(s):  
Porous Silicon ◽  
Separation Distance ◽  
Charge Carriers ◽  
Silicon Structure ◽  
Microscopic Mechanism ◽  
Current Threshold ◽  
Pore Separation ◽  
A Charge ◽  
P Type ◽  
Self Formation

A microscopic mechanism of the self-formation of a dense pore system in the porous silicon is proposed. According to it, the process of porous silicon self-formation is dictated by the laws of dynamics for a charge carriers system. The proposed mechanism is proved by the results of computer simulation. The values of inter-pore separation distance in p-type based porous material and anodization current threshold density are evaluated; the dependence of an inter-pore separation distance on the carriers concentration, close to n-1/2, is predicted.

Last Developments in Luminescence of Porous Silicon

1991 ◽  
Vol 220 ◽  
Author(s):  
A. Bsiesy ◽  
F. Gaspard ◽  
R. Hereino ◽  
M. Ugeon ◽  
F. Muller ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Charge Carriers ◽  
Anodic Current Density ◽  
High Porosity ◽  
Recombination Mechanism ◽  
Quantum Size ◽  
Tunnelling Effect ◽  
Photoluminescence Decay ◽  
Electroluminescence Intensity

ABSTRACTIt is shown that visible photoluminescence and electroluminescence can be obtained from porous silicon layers. Room temperature photoluminescence is readily obtained from as-formed high porosity samples. Light emission at wavelengths as short as 560 nm can be observed after further thinning of the silicon pore walls by dissolution in HF under illumination. Silicon walls can also be thinned by an electrochemical oxidation process, this method allowing to use layers of rather low porosities (65%) which thus gives good mechanical properties to the samples. The thinning of the already very small size crystallites of porous silicon leads to quantum size effects which are at the origin of the light emission far above the band gap of silicon. Photoluminescence decay characteristics suggest that a tunnelling effect could be involved in the recombination mechanism of photogenerated charge carriers. Bright electroluminescence during anodic oxidation of porous silicon has been also evidenced. The influence of the porosity, of the layer thickness and of the anodic current density on the integrated electroluminescence intensity are described in detail.

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