Values of capture cross sections of metastable defects in hydrogenated amorphous silicon

1996 ◽  
Vol 79 (4) ◽  
pp. 1926-1934 ◽  
Author(s):  
Richard H. Bube ◽  
Lisa E. Benatar ◽  
Kenneth P. Bube
Keyword(s):  
Amorphous Silicon ◽  
Cross Sections ◽  
Hydrogenated Amorphous Silicon ◽  
Capture Cross ◽  
Hydrogenated Amorphous ◽  
Capture Cross Sections

Analytical Determination of Generation-Recombination Rate In Amorphous Silicon

1986 ◽  
Vol 70 ◽  
Author(s):  
Jože Furlan ◽  
Slavko Amon
Keyword(s):  
Analytical Solution ◽  
Amorphous Silicon ◽  
Cross Sections ◽  
Recombination Rate ◽  
Exponential Model ◽  
Localized States ◽  
Analytical Determination ◽  
Capture Cross ◽  
Capture Cross Sections

ABSTRACTA general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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