Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices

2011 ◽  
Vol 99 (2) ◽  
pp. 022108 ◽  
Author(s):  
Adam L. Friedman ◽  
Jeremy T. Robinson ◽  
F. Keith Perkins ◽  
Paul M. Campbell
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Extraordinary Magnetoresistance ◽  
Grown Graphene ◽  
Graphene Devices

Room temperature NH3 detection of Ti/graphene devices promoted by visible light illumination

2017 ◽  
Vol 5 (5) ◽  
pp. 1113-1120 ◽  
Author(s):  
Min Zhao ◽  
Lanqin Yan ◽  
Xianfeng Zhang ◽  
Lihua Xu ◽  
Zhiwei Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Visible Light ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Light Illumination ◽  
Visible Light Illumination ◽  
Grown Graphene ◽  
Graphene Devices

3, 5 and 10 nm thick Ti decorated chemical-vapor-deposition (CVD) grown graphene devices (Ti/Gr) for NH3 detection were fabricated, and their sensing performances were great promoted by visible light illumination.

scholarly journals Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

2015 ◽  
Vol 1 (6) ◽  
pp. e1500222 ◽  
Author(s):  
Luca Banszerus ◽  
Michael Schmitz ◽  
Stephan Engels ◽  
Jan Dauber ◽  
Martin Oellers ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Copper Substrate ◽  
High Mobility ◽  
Chemical Vapor ◽  
Magnetic Field Sensors ◽  
Exfoliated Graphene ◽  
Cost Efficient ◽  
Grown Graphene ◽  
Graphene Devices

Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2V–1s–1, thus rivaling exfoliated graphene.

Superior characteristics of graphene field effect transistor enclosed by chemical-vapor-deposition-grown hexagonal boron nitride

2014 ◽  
Vol 2 (37) ◽  
pp. 7776-7784 ◽  
Author(s):  
Muhammad Waqas Iqbal ◽  
Muhammad Zahir Iqbal ◽  
Xiaozhan Jin ◽  
Jonghwa Eom ◽  
Chanyong Hwang
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Grown Graphene ◽  
Graphene Devices

We report the characterization of high-quality chemical-vapor-deposition (CVD)-grown graphene devices on CVD-grown hexagonal boron nitride (h-BN).

Flexible and Transparent Dielectric Film with a High Dielectric Constant Using Chemical Vapor Deposition-Grown Graphene Interlayer

ACS Nano ◽  
2013 ◽  
Vol 8 (1) ◽  
pp. 269-274 ◽  
Author(s):  
Jin-Young Kim ◽  
Jongho Lee ◽  
Wi Hyoung Lee ◽  
Iskandar N. Kholmanov ◽  
Ji Won Suk ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Dielectric Constant ◽  
Dielectric Film ◽  
Chemical Vapor ◽  
Transparent Dielectric ◽  
Grown Graphene ◽  
High Dielectric

The Effects of Hydrogen Flowrate during Pre-Annealing on Graphene Growth by Chemical Vapor Deposition Using Methanol as a Liquid Carbon Precursor

2019 ◽  
Vol 290 ◽  
pp. 107-112
Author(s):  
Raed Abdalrheem ◽  
Fong Kwong Yam ◽  
Abdul Razak Ibrahim ◽  
Khi Poay Beh ◽  
Hwee San Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Light Transmittance ◽  
High Hydrogen ◽  
Flow Rates ◽  
Hydrogen Flow ◽  
Number Of Layers ◽  
Crystallite Sizes ◽  
Grown Graphene

Studying an influence of several parameters on Chemical Vapor Deposition (CVD) used for graphene synthesis is crucial to optimizing the graphene quality to be Compatible with advanced devices. The effect of different hydrogen (H2) flow-rates (0, 50, 100, 150, 200, 250, and 300 sccm) during the pre-annealing process on CVD grown graphene have been reported. This study revealed that hydrogen flow rates during annealing changed the surface roughness/smoothness of the copper substrates. For high hydrogen flow rates, the smoothing effect was increased. Furthermore, the annealed graphene samples emerged a deferent number of layers because of morphological surface changes. According to Raman D- to G-band intensity ratios (ID/IG), the graphene quality was influenced by the annealing hydrogen flowrate. The visible light transmittance values of the grown graphene samples confirmed a few number of layers (mono to seven-layer). Mostly, the samples which annealed under moderate hydrogen flow rates showed less defects intensities and higher crystallite sizes.

scholarly journals Large scale structures in chemical vapor deposition-grown graphene on Ni thin films

2020 ◽  
Vol 709 ◽  
pp. 138225
Author(s):  
Derya Ataç ◽  
Johnny G.M. Sanderink ◽  
Sachin Kinge ◽  
Dirk J. Gravesteijn ◽  
Alexey Y. Kovalgin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Large Scale Structures ◽  
Scale Structures ◽  
Grown Graphene
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