Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

2011 ◽  
Vol 99 (2) ◽  
pp. 021906 ◽  
Author(s):  
Samantha E Bennett ◽  
David W Saxey ◽  
Menno J Kappers ◽  
Jonathan S Barnard ◽  
Colin J Humphreys ◽  
...  
Keyword(s):  
Electron Beam ◽  
Quantum Wells ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
The Impact

scholarly journals Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation

2018 ◽  
Vol 188 ◽  
pp. 19-23 ◽  
Author(s):  
J. Bogdanowicz ◽  
A. Kumar ◽  
C. Fleischmann ◽  
M. Gilbert ◽  
J. Houard ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
Beam Specimen ◽  
Specimen Preparation ◽  
The Impact

scholarly journals Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

2015 ◽  
Vol 106 (7) ◽  
pp. 072104 ◽  
Author(s):  
Fengzai Tang ◽  
Tongtong Zhu ◽  
Fabrice Oehler ◽  
Wai Yuen Fu ◽  
James T. Griffiths ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
Ingan Quantum Wells

Electron Beam-Induced Deposition for Atom Probe Tomography Specimen Capping Layers

2016 ◽  
Vol 23 (2) ◽  
pp. 321-328 ◽  
Author(s):  
David R. Diercks ◽  
Brian P. Gorman ◽  
Johannes J. L. Mulders
Keyword(s):  
Electron Beam ◽  
Atom Probe Tomography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
Near Surface ◽  
Surface Features ◽  
Dicobalt Octacarbonyl ◽  
Electron Beam Induced Deposition

AbstractSix precursors were evaluated for use as in situ electron beam-induced deposition capping layers in the preparation of atom probe tomography specimens with a focus on near-surface features where some of the deposition is retained at the specimen apex. Specimens were prepared by deposition of each precursor onto silicon posts and shaped into sub-70-nm radii needles using a focused ion beam. The utility of the depositions was assessed using several criteria including composition and uniformity, evaporation behavior and evaporation fields, and depth of Ga+ ion penetration. Atom probe analyses through depositions of methyl cyclopentadienyl platinum trimethyl, palladium hexafluoroacetylacetonate, and dimethyl-gold-acetylacetonate [Me2Au(acac)] were all found to result in tip fracture at voltages exceeding 3 kV. Examination of the deposition using Me2Au(acac) plus flowing O2 was inconclusive due to evaporation of surface silicon from below the deposition under all analysis conditions. Dicobalt octacarbonyl [Co2(CO)8] and diiron nonacarbonyl [Fe2(CO)9] depositions were found to be effective as in situ capping materials for the silicon specimens. Their very different evaporation fields [36 V/nm for Co2(CO)8 and 21 V/nm for Fe2(CO)9] provide options for achieving reasonably close matching of the evaporation field between the capping material and many materials of interest.

Effect of Thermal Aging on Microstructural Evolution in Ferrite of Duplex Stainless Steel in Nuclear Power Plant Applications

2017 ◽  
Vol 898 ◽  
pp. 818-825
Author(s):  
B. Zhang ◽  
F. Xue ◽  
S.L. Li ◽  
Xi Tao Wang ◽  
N.N. Liang ◽  
...  
Keyword(s):  
Aging Time ◽  
Thermal Aging ◽  
Atom Probe Tomography ◽  
Nuclear Power ◽  
Impact Test ◽  
Atom Probe ◽  
Nanoindentation Test ◽  
Α Phase ◽  
The Impact ◽  
Duplex Steels

Z3CN20-09M duplex steels are thermally aged at 400oC for up to 20,000 h. The mechanical properties have been characterized by Charpy V-notch impact test and nanoindentation test. It is found that the nanohardness in ferrite increases and the impact toughness decreases with aging time. Moreover, the distribution of alloying elements has been carefully characterized using atom probe tomography (APT). The results indicate that the ferrite decomposes into Cr-rich α' and Cr-lean α phase during the thermal aging and Ni-rich G-phase forms in ferrite. The effect of aging time on solute nanostructure has been investigated systematically.

Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography

2017 ◽  
Vol 110 (14) ◽  
pp. 143101 ◽  
Author(s):  
Bastien Bonef ◽  
Massimo Catalano ◽  
Cory Lund ◽  
Steven P. Denbaars ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
Energy Dispersive ◽  
X Ray ◽  
Ingan Quantum Wells

scholarly journals Development of an Energy-Sensitive Detector for the Atom Probe Tomography

2021 ◽  
pp. 1-16
Author(s):  
Christian Bacchi ◽  
Gérald Da Costa ◽  
Emmanuel Cadel ◽  
Fabien Cuvilly ◽  
Jonathan Houard ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Atom Probe ◽  
Sensitive Detector ◽  
Mass Peak ◽  
Peak Overlap ◽  
Thin Carbon ◽  
New Type ◽  
Carbon Foils ◽  
New Generation ◽  
The Impact

A position and energy-sensitive detector has been developed for atom probe tomography (APT) instruments in order to deal with some mass peak overlap issues encountered in APT experiments. Through this new type of detector, quantitative and qualitative improvements could be considered for critical materials with mass peak overlaps, such as nitrogen and silicon in TiSiN systems, or titanium and carbon in cemented carbide materials. This new detector is based on a thin carbon foil positioned on the front panel of a conventional MCP-DLD detector. According to several studies, it has been demonstrated that the impact of ions on thin carbon foils has the effect of generating a number of transmitted and reflected secondary electrons. The number generated mainly depends on both the kinetic energy and the mass of incident particles. Despite the fact that this phenomenon is well known and has been widely discussed for decades, no studies have been performed to date for using it as a means to discriminate particles energy. Therefore, this study introduces the first experiments on a potential new generation of APT detectors that would be able to resolve mass peak overlaps through the energy-sensitivity of thin carbon foils.

scholarly journals Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 437 ◽  
Author(s):  
Ayushi Rajeev ◽  
Weixin Chen ◽  
Jeremy Kirch ◽  
Susan Babcock ◽  
Thomas Kuech ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Cascade Laser ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
Strained Layer ◽  
Quantum Cascade ◽  
Spatially Resolved ◽  
Strained Layer Superlattice ◽  
Superlattice Structures ◽  
Laser Devices

Quantum wells and barriers with precise thicknesses and abrupt composition changes at their interfaces are critical for obtaining the desired emission wavelength from quantum cascade laser devices. High-resolution X-ray diffraction and transmission electron microscopy are commonly used to calibrate and characterize the layers’ thicknesses and compositions. A complementary technique, atom probe tomography, was employed here to obtain a direct measurement of the 3-dimensional spatially-resolved compositional profile in two InxGa1−xAs/InyAl1−yAs III-V strained-layer superlattice structures, both grown at 605 °C. Fitting the measured composition profiles to solutions to Fick’s Second Law yielded an average interdiffusion coefficient of 3.5 × 10−23 m2 s−1 at 605 °C. The extent of interdiffusion into each layer determined for these specific superlattices was 0.55 nm on average. The results suggest that quaternary active layers will form, rather than the intended ternary compounds, in structures with thicknesses and growth protocols that are typically designed for quantum cascade laser devices.

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