Design of computationally useful single‐electron digital circuits

1996 ◽  
Vol 79 (1) ◽  
pp. 526-539 ◽  
Author(s):  
M. G. Ancona
2021 ◽  
Vol 16 (1) ◽  
pp. 1-9
Author(s):  
Janaina Gonçalves Guimarães ◽  
Beatriz De Oliveira Câmara

In this work, digital circuits and systems based on single-electron tunneling technology will be presented and analyzed. A simple design methodology will be proposed using a programmable single-electron NAND/NOR gate as a building block. Aspects such as operating temperature, noise, and charge fluctuations will be discussed. SET devices can reach ultra-low power consumption and high frequencies during operation. Although there are already many digital SET circuits and systems previously proposed and studied, there are few works about design methodology for SETs. This study shows a proposal for designing combinational and sequential singleelectron circuits aiming at systems design. In the end, this work reinforces the use of single-electron technology as a possible large scale device in the future.


1997 ◽  
Vol 81 (7) ◽  
pp. 3311-3315 ◽  
Author(s):  
M. G. Ancona

1995 ◽  
Vol 78 (4) ◽  
pp. 2520-2530 ◽  
Author(s):  
Alexander N. Korotkov ◽  
Ruby H. Chen ◽  
Konstantin K. Likharev

Author(s):  
W. Kunath ◽  
E. Zeitler ◽  
M. Kessel

The features of digital recording of a continuous series (movie) of singleelectron TV frames are reported. The technique is used to investigate structural changes in negatively stained glutamine synthetase molecules (GS) during electron irradiation and, as an ultimate goal, to look for the molecules' “undamaged” structure, say, after a 1 e/Å2 dose.The TV frame of fig. la shows an image of 5 glutamine synthetase molecules exposed to 1/150 e/Å2. Every single electron is recorded as a unit signal in a 256 ×256 field. The extremely low exposure of a single TV frame as dictated by the single-electron recording device including the electron microscope requires accumulation of 150 TV frames into one frame (fig. lb) thus achieving a reasonable compromise between the conflicting aspects of exposure time per frame of 3 sec. vs. object drift of less than 1 Å, and exposure per frame of 1 e/Å2 vs. rate of structural damage.


Author(s):  
G.Y. Fan ◽  
Bruce Mrosko ◽  
Mark H. Ellisman

A lens coupled CCD camera showing single electron sensitivity has been built for TEM applications. The design is illustrated in Fig. 1. The bottom flange of a JEM-4000EX microscope is replaced by a special flange which carries a large rectangular leaded glass window, 22 mm thick. A 20 μm thick layer of red phosphor is coated on the window, and the entire window is sputter-coated with a thin layer of Au/Pt. A two-lens relay system is used to provide efficient coupling between the image on the phosphor scintillator and the CCD imager. An f1.0 lens (Goerz optical) with front focal length 71.6 mm is used as the collector. A mirror prism, of the Amici type, is used to "bend" the optical path by 90° to prevent X-rays which may penetrate the leaded glass from hitting the CCD detector. Images may be relayed directly to the camera (1:1) or demagnified by a factor of up to 3:1 by moving the lens assembly.


1988 ◽  
Vol 49 (C2) ◽  
pp. C2-459-C2-462 ◽  
Author(s):  
F. A.P. TOOLEY ◽  
B. S. WHERRETT ◽  
N. C. CRAFT ◽  
M. R. TAGHIZADEH ◽  
J. F. SNOWDON ◽  
...  
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