Energy relaxation processes of hot quasi‐two‐dimensional excitons in very thin GaAs/AlGaAs quantum wells by exciton–acoustic‐phonon interaction

1996 ◽  
Vol 79 (1) ◽  
pp. 424-426 ◽  
Author(s):  
Z. L. Yuan ◽  
Z. Y. Xu ◽  
Weikun Ge ◽  
J. Z. Xu ◽  
B. Z. Zheng
1998 ◽  
Vol 94 (3) ◽  
pp. 415-420 ◽  
Author(s):  
A.M. Kreshchuk ◽  
S.V. Novikov ◽  
I.G. Savel'ev ◽  
T.A. Polyanskaya ◽  
B. Pődör ◽  
...  

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3660-3663 ◽  
Author(s):  
I.-K. OH ◽  
JAI SINGH

We present a comprehensive study of the process of exciton formation due to exciton-phonon interaction. Using the exciton-phonon interaction arising from deformation potential, piezoelectric, and polar couplings, we have calculated the rate of formation of an exciton as a function of carrier densitiies, temperatures, and center-of-mass momentum ( K ‖) in quantum wells. Our results show that excitons are dominantly formed at non-zero K ‖, which agrees very well with experiments. The formation of an exciton due to emission of longitudinal optical phonon is found to be more efficient at relatively small values of K ‖, and that due to acoustic phonon emission is more efficient at relatively large K ‖ values for carrier temperature Te-h≲50 K.


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